Abstract:Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in nanoscale transistors within heterogeneous integrated circuit is still very limited up to now. Multiphysics computation for the heterogeneous integration of nanoscale p-FinFET with GaN high electron mobility transistor (HEMT) on silicon substrate is performed. Firstly, self-heating of GaN HEMT induced thermal stress is simulated. Then, thermal stress effects induced by the GaN HEMT on quantum transport in the FinFET at different locations are compared and analyzed, including the hole effective mass, hole average velocity, on/off-state current, and on-off ratio. Moreover, the impacts of crystal orientation configurations are further discussed. Simulation results show that the impact of thermal stress on FinFET is highly dependent on the Si crystal orientation and its location relative to GaN HEMT. Taking the FinFET with (001)/[110] confinement/transport orientation, which is at a distance of R FET and an angle of φ from the GaN HEMT as an example, thermal stress induces the significant reductions in I on and I off of FinFET at φ = π/2 and φ = 3π/2, and the increases of I on and I off in FinFET at φ = 0 and φ = π, but has small impact on FinFETs located diagonally to the GaN HEMT.

Electrothermal characterization of SOI FinFETs

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Electrothermal Effects on Hot Carrier Injection in N-Type Soi Finfet under Circuit-Speed Bias

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs—AC Versus Circuit-Speed Random Stress

Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

Investigation of Self-Heating Effect in SOI Tunnel Field-Effect Transistor

Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs

Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Ultra Fast (<1 Ns) Electrical Characterization of Self-Heating Effect and Its Impact on Hot Carrier Injection in 14nm FinFETs

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors