Abstract:Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in nanoscale transistors within heterogeneous integrated circuit is still very limited up to now. Multiphysics computation for the heterogeneous integration of nanoscale p-FinFET with GaN high electron mobility transistor (HEMT) on silicon substrate is performed. Firstly, self-heating of GaN HEMT induced thermal stress is simulated. Then, thermal stress effects induced by the GaN HEMT on quantum transport in the FinFET at different locations are compared and analyzed, including the hole effective mass, hole average velocity, on/off-state current, and on-off ratio. Moreover, the impacts of crystal orientation configurations are further discussed. Simulation results show that the impact of thermal stress on FinFET is highly dependent on the Si crystal orientation and its location relative to GaN HEMT. Taking the FinFET with (001)/[110] confinement/transport orientation, which is at a distance of R FET and an angle of φ from the GaN HEMT as an example, thermal stress induces the significant reductions in I on and I off of FinFET at φ = π/2 and φ = 3π/2, and the increases of I on and I off in FinFET at φ = 0 and φ = π, but has small impact on FinFETs located diagonally to the GaN HEMT.

Investigation of Degradation under Arbitrary Bias Conditions in HfO2 Based Nanosheet Nfets by 3D Kinetic Monte-Carlo Method

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Entire Bias Space Statistical Reliability Simulation by 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs Based Circuits

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Investigation of PBTI Degradation in Nanosheet nFETs With HfO 2 Gate Dielectric by 3D-KMC Method

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions

Trap Dynamics Based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

Understanding Hot Carrier Degradation and Variation in FinFET Technology

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Investigation of Interplays Between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs

New Observations On The Two-Stage Degradation Of Hot Carrier Reliability In High-K/Metal-Gate Mosfets

Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs

Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits

Efficient Variability- And Reliability-Aware Device-Circuit Co-Design: From Trap Behaviors To Circuit Performance

Channel Hot-Carrier Degradation Characteristics and Trap Activities of High-K/metal Gate Nmosfets