Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

Entire Bias Space Statistical Reliability Simulation by 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs Based Circuits

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3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

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Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Statistical Simulation of Self-Heating Induced Variability and Reliability with Application to Nanosheet-FETs Based SRAM

Multi-physics Simulations for Nanoscale CMOS Reliability

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations

A Unified Finfet Reliability Model Including High K Gate Stack Dynamic Threshold Voltage, Hot Carrier Injection, and Negative Bias Temperature Instability

Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs

Investigation of PBTI Degradation in Nanosheet nFETs With HfO 2 Gate Dielectric by 3D-KMC Method

New Understanding on the Single-Trap Response under NBTI Stress and the Resulted Stochastic Degradation in Nanoscale MOSFETs