Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Statistical Simulation of Self-Heating Induced Variability and Reliability with Application to Nanosheet-FETs Based SRAM

Self-heating Induced Variability and Reliability in Nanosheet-FETs Based SRAM

Self-heating Induced Variability and Reliability in Advanced Logic Devices and Circuits

Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the “Thermal-House”

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Unified Self-Heating Effect Model for Advanced Digital and Analog Technology and Thermal-Aware Lifetime Prediction Methodology

Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Efficient Variability- And Reliability-Aware Device-Circuit Co-Design: From Trap Behaviors To Circuit Performance

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

A New Framework of Physics-Based Compact Model Predicts Reliability of Self-Heated Modern ICs: FinFET, NWFET, NSHFET Comparison

Self-heating Aware EM Reliability Prediction of Advanced CMOS Technology by Kinetic Monte Carlo Method

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices