Unified Self-Heating Effect Model for Advanced Digital and Analog Technology and Thermal-Aware Lifetime Prediction Methodology

H. Jiang,L. Shen,S. H. Shin,N. Xu,G. Du,B. -Y. Nguyen,O. Faynot,M. A. Alam,X. Zhang,X. Y. Liu
DOI: https://doi.org/10.23919/vlsit.2017.7998153
2017-01-01
Abstract:Self-heating effect (SHE) has become a significant concern for device performance, variability and reliability co-optimization due to more confined layout geometry and lower-thermal-conductivity materials adopted in advanced transistor technology, which substantially impacts the integrated circuit (IC)'s design schemes. In this work, a new methodology for evaluation of SHE in both digital and analog circuits is demonstrated by using pulse-aware and existing sine-aware analytical models respectively. Correlating SHE to physics-based thermal-aware reliability models provides insights for design and sign-offs of advanced digital and analog ICs.
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