Abstract:Self-heating effects (SHE) has emerged as an unfortunate corollary of confined-gate transistors (e.g. FinFET; Nanowire-FET, NWFET; NanoSheet-FET, NSHFET) needed for electrostatically-robust sub-10nm ICs [1-3]. The IC-specific SHE reflects increasing thermal resistances (Rth) associated with all three tiers (i.e., transistor, circuit, and system) of the hierarchy. Many groups have developed tier-specific thermal models, which can neither predict the junction temperature (Tj) accurately nor suggest innovative strategies to reduce Tj by identifying/removing thermal bottlenecks in the hierarchy. In this paper, we develop computationally efficient, physics-based compact models for each tier, and then stack them to estimate Tj — dictated performance/reliability of sub-10nm technologies. Specifically, we (i) refine thermal compact model for front-end-of-line (FEOL) level (TCMF) based on 3D FEM transient thermal simulations; (ii) investigate SHE by BSIM-CMG circuit simulation for ICs with refined FEOL model; (iii) develop a physics-based thermal compact model for back-end-of line (BEOL) interconnects and interposers (TCMB) by using image charge and effective medium theory (EMT). The TCMF and TCMB are then integrated to predict Tj-specific ICs reliability (i.e., NBTI, HCI, EM) for 14,10, and 7nm FinFETs, NWFETs, and NSHFETs; and finally (iv) we propose various mitigation strategies using thermal shunts to suppress SHE. Our work demonstrates that NSHFET is a good candidate at sub-10nm nodes considering both lower subthreshold swing (SS) than that of FinFET and better reliability than that of NWFET.

Self-heating Induced Variability and Reliability in Nanosheet-FETs Based SRAM

Statistical Simulation of Self-Heating Induced Variability and Reliability with Application to Nanosheet-FETs Based SRAM

Self-heating Induced Variability and Reliability in Advanced Logic Devices and Circuits

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermal characterization of SOI FinFETs

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

Unified Self-Heating Effect Model for Advanced Digital and Analog Technology and Thermal-Aware Lifetime Prediction Methodology

Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Efficient Variability- And Reliability-Aware Device-Circuit Co-Design: From Trap Behaviors To Circuit Performance

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Pitfalls for the characterization of self-heating effect in nano-scaled devices

Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design

Investigation of Self-Heating Effect on Stacked Nanosheet GAA Transistors

Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET

A New Framework of Physics-Based Compact Model Predicts Reliability of Self-Heated Modern ICs: FinFET, NWFET, NSHFET Comparison

Variability- and Reliability-Aware Design for 16/14nm and Beyond Technology