Abstract:—As semiconductor technology nodes continue to scale down to 3 nm, the self-heating effect in Gate-All-Around Nanosheet Field-Effect Transistors (GAA-NSFETs) has become a significant concern. This issue arises due to the complex interaction between device dimensions, material properties, and thermal management, which can lead to performance degradation and reliability challenges in advanced transistor designs. This paper aims to investigate the self-heating phenomenon in three-stacked nanosheet FETs and to develop a novel thermal resistance model that accurately captures the thermal behavior of these devices. The goal is to create a reliable framework for analyzing and mitigating self-heating effects in nanosheet-based transistors. We employed TCAD and SPICE simulations to analyze the self-heating effect in nanosheet FETs. A new multi-stage thermal resistance model (TRM), incorporating both thermal resistance (Rₜₕ) and thermal capacitance (Cₜₕ), was developed within the Berkeley Short-channel IGFET Model-Common MultiGate (BSIM-CMG) framework. Model accuracy was ensured by fitting the simulated ID-VG curves to experimental data, followed by parameter extraction and calibration based on self-heating evaluations. The proposed multi-stage Rₜₕ model demonstrated strong agreement with the simulation results, providing an accurate representation of the thermal behavior in three-stacked nanosheet FETs. This model offers a robust tool for analyzing self-heating effects in advanced nanosheet devices and can be used to guide the design and optimization of future low-power, high-performance transistors.

Investigation of Self-Heating Effect on Stacked Nanosheet GAA Transistors

Layout Design Correlated with Self-Heating Effect in Stacked Nanosheet Transistors

Investigation on self-heating effect in carbon nanotube field-effect transistors

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Computational Study of Thermal Stress in Gate-All-Around Nanosheet Field Effect Transistor

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs from Top-Down Approach

Pitfalls for the characterization of self-heating effect in nano-scaled devices

Self-Heating Effects of Vertical Gate-All-Around Transistors: Analysis and Modeling

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Analytical Multistage Thermal Resistance Model for NSFET Self-heating Effects

Thermal Coupling Among Channels and Its DC Modeling in Sub-7-nm Vertically Stacked Nanosheet Gate-All-Around Transistor

Investigation of Sheet Width Dependence on Hot Carrier Degradation in GAA Nanosheet Transistors

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET

Signature of electrothermal transport in 18nm vertical junctionless gate-all-around nanowire field effect transistors

Impact of Device-to-Device Thermal Interference Due to Self-Heating on the Performance of Stacked Nanosheet FETs

Two-temperature Principle for Evaluating Electrothermal Performance of GaN HEMTs

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Self-heating Induced Variability and Reliability in Advanced Logic Devices and Circuits