Abstract:With technology node scaling down to 5 nm, the narrow device geometry confines the material thermal conductivity and further aggravates the self-heating effect in gate-all-around (GAA) transistors. In this paper, we investigate the self-heating of horizontally stacked three-layer GAA nanosheet transistors by 3-D finite-element modeling (FEM) simulation. The anisotropic thermal conductivity of nanosheets with the dependence of silicon thickness and temperature is implemented in the FEM simulator to evaluate thermal behavior accurately. The impact of layout design on thermal properties is investigated comprehensively from single device to device arrays with implication on electrical performance. The results indicate that the width of nanosheet is the key parameter to make the tradeoffs between self-heating and electrical characteristic. Meanwhile, the optimizations of layout design are given to suppress the thermal effects, including self-heating, nonuniformity of temperature, and thermal crosstalk at device level. This paper will provide guidelines for layout design, thermal management, device performance, and thermal-aware reliability prediction in the GAA-stacked structure.

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Research of Hot-carrier-induced Degradation on SOI NLIGBT

Investigation of Self-Heating Effect on Stacked Nanosheet GAA Transistors

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Layout Design Correlated with Self-Heating Effect in Stacked Nanosheet Transistors

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Self-Heating Influence on Hot Carrier Degradation Reliability of GAA FET by 3D KMC Method

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Study on Degradation Mechanisms of Thermal Conductivity for Confined Nanochannel in Gate-All-Around Silicon Nanowire Field-Effect Transistors

Computational Study of Thermal Stress in Gate-All-Around Nanosheet Field Effect Transistor

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Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs from Top-Down Approach

Investigation on Electrostatic Discharge Robustness of Gate-All-Around Silicon Nanowire Transistors Combined with Thermal Analysis

HCI and NBTI Induced Degradation in Gate-All-around Silicon Nanowire Transistors

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization