Abstract:Stress simulations of Si0.5Ge0.5-channel nanowire transistors with typical 5 nm technology-node dimensions are performed to study the effect of layout on the channel stress generated by virtual substrates, by epitaxial mismatch from source/drain epitaxial layers, and by the sacrificial layers between the wires. Dependence of the stress on wire length originates from the wire cut, leading to elastic stress relaxation of the wire/sacrificial layer stack which is more pronounced toward the edge of the structure, and from reduced effectiveness of source/drain stressors at this edge. Consequently, large (>500 MPa) variations in channel stress are observed between long and short wires, between devices at different positions along the structure, as well as between the various wires within the same transistor for multiwire architectures. Besides layout dependence, this work also reports on the effect of nonideal, defective source/drain stressors on channel stress generation in nanowires. For nanowires, these defects may originate from merging of different epitaxial growth fronts coming from segments which start from different wires and the substrate. They can be classified into horizontal (between wires), vertical (between gates), and lateral defects (between neighboring structures). Stress simulations with air gaps at these locations allow estimating the impact of these defects for the case where there is no stress transfer across the defect planes. While horizontal and lateral defects lead to minimal (<10%) loss of channel stress, an imperfect interface between neighboring gates (vertical defects) is very detrimental and can lead to reversal of the stress sign as compared to perfect source/drain epi.

Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

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Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

A Non-Destructive Channel Stress Characterization for Gate-All-Around Nanosheet Transistors by Confocal Raman Methodology

Computational Study of Thermal Stress in Gate-All-Around Nanosheet Field Effect Transistor

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors

Investigation of different strain configurations in gate-all-around silicon nanowire transistor

TCAD Study on Strain Engineering in Vertical Channel Gate-all-around Transistor

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Layout Design Correlated with Self-Heating Effect in Stacked Nanosheet Transistors

TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS