Abstract:The impact of the process sequence and device architecture of pure-metal replacement gate (PMRG) nand and terabit cell array transistor (TCAT) on mechanical stress and electrical properties of the devices was analyzed using Sentaurus technology computer-aided design (TCAD) simulation. In the case of PMRG, Al2O3 was deposited before the polysilicon channel. This process sequence resulted in a significant change in channel stress concerning the deposition temperature of tungsten ( compared to Al2O3 ( . In contrast, in TCAT, the channel stress relied on than . This highlights that the process sequence strongly affects channel stress. Meanwhile, the material in contact between adjacent W gates differed between PMRG and TCAT (SiO2 in PMRG and Al2O3/Si3N4/SiO2 in TCAT). This difference in device architecture determines the trend of channel stress concerning . Consequently, the ON-current increased proportionally with the increase in channel tensile stress. Specifically, in PMRG, the ON-current increased as increased, and decreased. Additionally, in TCAT, the ON-current increased as both , and increased. Moreover, when the deposition temperature of each material was set to reach the highest channel tensile stress, PMRG and TCAT showed ON-current enhancements of 7.62% and 8.15%, respectively. In addition, the channel stress trends using molybdenum (Mo) metal were similar to those using W metal.

TCAD Study on Strain Engineering in Vertical Channel Gate-all-around Transistor

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Strain Engineered In/sub X/ga/sub 1-X/as Channel Phemts on Virtual Substrates: a Simulation Study

Effect Of Intrinsic Stress From A Nanoscale High-Dielectric Constant Gate Oxide On Strain In A Transistor Channel

A Non-Destructive Channel Stress Characterization for Gate-All-Around Nanosheet Transistors by Confocal Raman Methodology

Body Effect of SiGe and CESL Strained Nano-Node NMOSFETs on (100) Silicon Substrate

Comparison of NMOSFET and PMOSFET Devices That Combine CESL Stressor and SiGe Channel

Impact of Process Sequence and Device Architecture on Mechanical Stress and Electrical Properties of 3-D Nand Flash