Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

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Performance of Junctionless and Inversion-Mode Thin-Film Transistors With Stacked Nanosheet Channels

Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

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A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

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Interface States in Gate Stack of Carbon Nanotube Array Transistors.

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A Characterization Study of a Nanowire‐Network Transistor with Various Channel Layers

Thermal Coupling Among Channels and Its DC Modeling in Sub-7-nm Vertically Stacked Nanosheet Gate-All-Around Transistor

Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

A Comprehensive Analysis of Nanosheet Field-Effect Transistor: Recent Advances and Comparative Study

Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits' Performance

Design Considerations for Si- and Ge-Stacked Nanosheet Pmosfets Based on Quantum Transport Simulations

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Nanosheet integration of induced tunnel field-effect transistor with lower cost and lower power

Computational Study of Thermal Stress in Gate-All-Around Nanosheet Field Effect Transistor

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS