Abstract:ABSTRACT Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits (ICs) have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor (FinFET) and gate-all-around FET (GAAFET), more gate electrodes have been added to three-dimensional (3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore’s law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs (CFET), 3D stack (3DS) FETs and vertical-channel transistors (VFET), for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

What problem does this paper attempt to address?

The problem this paper attempts to address is how to maintain the development trend of Moore's Law through innovative transistor structures as the technology nodes of integrated circuits (IC) continue to shrink, and to overcome the limitations in performance, power consumption, and area (PPA) brought by traditional geometric scaling. Specifically, the paper focuses on the following aspects: 1. **Innovation in Transistor Structures**: From planar transistors to Fin Field-Effect Transistors (FinFET), to Gate-All-Around Field-Effect Transistors (GAAFET), to Complementary Field-Effect Transistors (CFET) and Three-Dimensional Stacked Field-Effect Transistors (3DS FET), these structural innovations aim to improve electrostatic integrity, increase drive current, and achieve higher integration within the same device area. 2. **Challenges Beyond the 1-Nanometer Node**: As technology nodes approach 1 nanometer, traditional geometric scaling methods are no longer applicable. The paper explores revolutionary scaling methods such as vertical transistor stacking to achieve higher density and flexible circuit or system design. 3. **Application of New Materials and New Operating Theories**: The paper discusses the application of new channel materials (such as pure germanium, carbon nanotubes, 2D materials, etc.) and new operating theories (such as tunneling transistors, Dirac sources, and negative capacitance) to break through the fundamental Boltzmann limit and improve transistor performance and energy efficiency. 4. **Breakthroughs in Process and Design Methods**: To successfully transition from planar transistors to FinFET, to GAAFET, to CFET or vertical transistors, a series of key process and design method innovations are required, including upgrades in high-k metal gate (HKMG) and strain technology, Design Technology Co-Optimization (DTCO), and System Technology Co-Optimization (STCO). In summary, this paper aims to provide guidance and prospects for future advanced transistor research and development by reviewing these innovative works.

New structure transistors for advanced technology node CMOS ICs

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Research Progress in Ge-based Advanced Field Effect Transistor Technology

Carbon Nanotube Materials for Future Integrated Circuit Applications

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS

Carbon nanotube-based CMOS transistors and integrated circuits

The future transistors

State of the Art and Future Perspectives in Advanced CMOS Technology

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Low-dimensional materials-based field-effect transistors

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Small Feature‐Size Transistors Based on Low‐Dimensional Materials: From Structure Design to Nanofabrication Techniques

Stacked Complementary Field-Effect Transistors: Promises and Challenges

Two dimensional semiconducting materials for ultimately scaled transistors

Integrations and Challenges of Novel High-K Gate Stacks in Advanced CMOS Technology

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Three-dimensional Vertical ZnO Transistors with Suspended Top Electrodes Fabricated by Focused Ion Beam Technology

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Stacked Lateral Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors and Their Three-Dimensional Integrated Circuits