The future transistors

Wei Cao,Huiming Bu,Maud Vinet,Min Cao,Shinichi Takagi,Sungwoo Hwang,Tahir Ghani,Kaustav Banerjee

DOI: https://doi.org/10.1038/s41586-023-06145-x

IF: 64.8

2023-08-17

Nature

Abstract:The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of complementary metal–oxide–semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. However, the downscaling of transistors while keeping the power consumption low is increasingly challenging, even for the state-of-the-art fin field-effect transistors. Here we present a comprehensive assessment of the existing and future CMOS technologies, and discuss the challenges and opportunities for the design of FETs with sub-10-nanometre gate length based on a hierarchical framework established for FET scaling. We focus our evaluation on identifying the most promising sub-10-nanometre-gate-length MOSFETs based on the knowledge derived from previous scaling efforts, as well as the research efforts needed to make the transistors relevant to future logic integrated-circuit products. We also detail our vision of beyond-MOSFET future transistors and potential innovation opportunities. We anticipate that innovations in transistor technologies will continue to have a central role in driving future materials, device physics and topology, heterogeneous vertical and lateral integration, and computing technologies.

multidisciplinary sciences

What problem does this paper attempt to address?

The paper attempts to address the issue of how to design and manufacture field-effect transistors (FETs) with sub-10 nanometer gate lengths in future logic integrated circuit products to meet the demands for higher performance, lower power consumption, and higher integration density. Specifically, the paper focuses on the following points: 1. **Evaluation of existing CMOS technology**: The paper conducts a comprehensive evaluation of existing CMOS technology, discussing the challenges and opportunities faced by current technology as it continues to scale down in size. 2. **Design of sub-10 nanometer gate length FETs**: The paper focuses on evaluating the design of sub-10 nanometer gate length MOSFETs based on the existing scaling framework, aiming to identify the most promising technological solutions. 3. **Future transistors beyond MOSFETs**: The paper also looks ahead to future transistor technologies beyond traditional MOSFETs and explores potential innovative opportunities. 4. **Research directions and technological innovations**: The paper emphasizes the research efforts and technological innovations needed to achieve these goals, including new materials, device physics, topologies, heterogeneous vertical and horizontal integration, and the development of computational technologies. Through these studies, the paper hopes to provide more focused and efficient directions for widely distributed research activities to drive the development of future transistor technologies.

The future transistors

Research Progress in Ge-based Advanced Field Effect Transistor Technology

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Carbon Nanotube Materials for Future Integrated Circuit Applications

From MOSFET to FinFET to GAAFET: The evolution, challenges, and future prospects

Carbon nanotube-based CMOS transistors and integrated circuits

New structure transistors for advanced technology node CMOS ICs

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment

Transistor Engineering Based on 2D Materials in the Post-Silicon Era

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Scaling carbon nanotube CMOS FETs towards quantum limit

Low-dimensional materials-based field-effect transistors

Ultimate-scaled One-Dimensional Transistors: Surpassing the Subthreshold Swing Limit

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

CMOS Technology for the Nanometer Regime

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

State of the Art and Future Perspectives in Advanced CMOS Technology

Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS