Abstract:The miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has been the driving force behind the development of integrated circuits over the past 60 years; however, owing to short channel effect, reducing the gate length of MOSFETs to sub-10 nm represents a fundamental challenge. Two-dimensional materials (2DMs) with atomic scale thicknesses and non-dangling bonds interface enable sub-10 nm scale length, making them suitable candidates for advanced tech nodes beyond sub-3 nm. Although the performance metrics of a single 2DMs transistor have equalled or surpassed those of silicon, leaving no doubt about the potential of 2DMs at the laboratory level, the way of moving 2DMs from ‘lab to fab’ remains unclear. In this Review, we analyse the similarities and differences between 2DMs MOSFETs and silicon MOSFETs in the integrated circuits engineering process; we present potential solutions for channel, contact and dielectric engineering using 2DM to address the scaling challenges faced by a silicon-based device at the advanced tech node. Finally, we summarize the challenges in translating the performance of individual 2DMs devices into large-scale integrated circuits, including large-scale and stable transfer technology, high-quality material synthesis with controllable layers. Once these technical issues are properly solved, 2DMs can take full advantage of their properties at a farther scaling. This Review systematically compares 2DMs and silicon metal–oxide–semiconductor field-effect transistors technologies in the integrated circuits engineering process and presents potential solutions for channel, contact and dielectric engineering using 2DM to address the scaling challenges faced by a silicon-based device at the advanced tech node.

Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

Two dimensional semiconducting materials for ultimately scaled transistors

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Transistor Engineering Based on 2D Materials in the Post-Silicon Era

A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment

Field-Effect Transistors Based on Two-dimensional Materials (Invited)

Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study

Process integration and future outlook of 2D transistors

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

From MOSFET to FinFET to GAAFET: The evolution, challenges, and future prospects

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

The future transistors

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance