Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

Kausik Majumdar,Chris Hobbs,Paul D. Kirsch

DOI: https://doi.org/10.1109/led.2014.2300013

IF: 4.8157

2014-03-01

IEEE Electron Device Letters

Abstract:In this letter, we propose a nonplanar transition metal dichalcogenide (TMD) channel field effect transistor and explore its ballistic performance in the ultimate scaling limit of sub-5 nm physical gate length $(L_{g})$ using self-consistent nonequilibrium Greens function framework. It is observed that electrostatic integrity remains intact even at such ultrashort $L_{g}$ and physical scaling is eventually limited by direct source-drain tunneling. Benchmarking different TMD channels at various off-state current conditions shows potential for ultralow-leakage applications with small footprint, excellent energy efficiency, and moderate performance.

engineering, electrical & electronic