Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

Performance of Junctionless and Inversion-Mode Thin-Film Transistors With Stacked Nanosheet Channels

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS

Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

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High Performance Si Nanowire TFTs with Ultrahigh On/off Current Ratio and Steep Subthreshold Swing

Design Considerations for Si- and Ge-Stacked Nanosheet Pmosfets Based on Quantum Transport Simulations

Impacts of Vertically Stacked Monolithic 3D-IC Process on Characteristics of Underlying Thin-Film Transistor

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break

Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets

Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits' Performance

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

A Comprehensive Analysis of Nanosheet Field-Effect Transistor: Recent Advances and Comparative Study

Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer