Abstract:Understanding the effect of short channels on the performance of field‐effect transistors (FETs) from emerging low‐dimensional semiconductors is crucial to estimate their suitability in high‐density integrated circuits. To this end, intricate and costly equipment capable of nanoscale photolithography or e‐beam lithography is usually required to fabricate FETs with shrinking channel lengths. Here, the authors propose an economical suspended nanofiber lithography technique with short‐channel processing capability, and compatibility with modern semiconductor foundries. By combining the merits of the near‐field electrohydrodynamic printing of nanofibers and microscale photolithographic process, the authors successfully fabricate short channels with lengths as small as 48 nm via masks of suspended nanofibers, whose diameters are easily tuned by adjusting the printing conditions. This technique is further applied for exploring the performance of short‐channel FETs using semiconductors such as single‐walled carbon nanotubes or electrochemically‐exfoliated MoS2. Their performance is comparable to those made from more demanding lithography methods. This economical nanofabrication technique is promising to be applied on a variety of semiconductors for highly integrated fabrication of submicron short‐channel device arrays. A scalable and economical nanofabrication technique is developed by combining the near‐field electrohydrodynamic printing of suspended nanofibers with photolithographic processes, and is further exploited for studying the performances of short‐channel field‐effect transistors based on carbon nanotubes or MoS2. This approach is promising to be applied on a variety of semiconductors for the highly integrated fabrication of submicron short‐channel device arrays.

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Vertical N-Type and P-Type Nanosheet FETs with C-Shaped Channel

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Source/Drain Architecture Design of Vertical Channel Nanowire Fet for Sub-10nm Node

Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

Simulation of 2D ReS2/WSe2 Based Complementary Field-Effect Transistors Towards 1 Nm Technology Node

Large-scale sub-5-nm vertical transistors by van der Waals integration