Abstract:As CMOS technology is downscaled into 22nm a transition from 2D to 3D transistors occurred and a revolutionary FinFET design was introduced. During this R&D, different strain engineering methods including selectively grown SiGe on source/drain as stressor material was used to boost the channel mobility. Another way to deal with channel mobility issue is to integrate Ge material which has high mobility for both p and n channel instead having Si fin in the transistor structure. In this study, the Si Fin is processed and subsequently removed to create the trench between the STI SiO2 and a SiGe/Ge bilayer is selectively grown to fill the trench that is used as the MOS channel. In principle, there are two methods to remove the Si Fins as shown Fig.1 Primarily using WET etch while the second method is using the HCl etch during the epitaxy process. Since SiGe/Ge epitaxy process is sensitive to surface quality of the Si Fin, a meticulous in-situ cleaning is essential to remove all undesired residuals from the Si surface. At first, selective Ge growth was applied to fill out the Si removed areas. The Ge layer is difficult to fill the small trenches (Fig.2a), therefore a SiGe layer is deposited as the strain relaxed buffer (SRB) layer in the trench prior to the Ge layer (Fig.2b). A Chemical Mechanical Polish (CMP) is necessary to planarize the surface (Fig.2c). The Ge content and the strain amount in the SiGe layers was directly measured using high-resolution x-ray diffraction (HRXRD) rocking curves (RC). RCs were done at (113) reflection where the incident beam is as low as 2.6° and a large area of sample containing an enormous of number of transistors could be covered by x-ray beam. These RCs were simulated by the Takagi-Taupin equations and compared to the experimental curves in order to obtain high precision data for analysis. Cross-section images where provided by high-resolution scanning electron microscopy (HRSEM) and transmission electron microscopy (HRTEM) to measure the layer thickness, epi-quality, and integrity of the whole transistor structures. In the latter analysis, energy dispersive spectroscopy (EDS) technique was also employed to reconfirm the Ge profile in the channel regions of the FinFETs. Reference s [1] Wang G, Abedin A, Moeen M, et al. Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology[J]. Solid-State Electronics, 2015, 103: 222-228. Figure 1

Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around Transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

A Comprehensive Study of NF3-Based Selective Etching Processes: Application to the Fabrication of Vertically Stacked Horizontal Gate-All-around Si Nanosheet Transistors

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break

Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices

Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 Nm Node

Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

Source/Drain Architecture Design of Vertical Channel Nanowire Fet for Sub-10nm Node

Process Optimizations to Recessed E-Sige Source/Drain for Performance Enhancement in 22 Nm All-Last High-K/Metal-Gate Pmosfets

Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET

Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance

Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching

Strained Si Nanosheet pFET Based on SiC Strain Relaxed Buffer Layer for High Performance and Low Power Logic Applications

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs

Erbium/Platinum Silicided Gate-All-Around Silicon Nanowire Schottky Source/Drain MOSFETs