Abstract:SOI FinFETs and other Gate-all-around (GAA) transistors topologies have excellent 3-D electrostatic control and therefore, have been suggested as potential technology options for sub-14 nm technology nodes. Unfortunately, the narrow gate geometry and reduced gate pitch suppress heat dissipation and increase thermal cross-talk, leading to severe self-heating of these transistors. Self-heating degrades performance and makes the classical reliability theories based on T L ~T sub irrelevant. In this paper, first, we propose a physics-based thermal circuit compact model for multi-fin SOI FinFETs to characterize self-heating and validate the results by AC conductance method. Next, we analyze HCI degradation varying with the number of fin (N fin ), chuck temperature (T sub ) and AC frequency (f). The results show that HCI degradation dependent variables (N FIN , T sub , f) can be correlated to the lattice temperature (T L = g(N FIN , T sub , f)) and obey the universal degradation curve (ΔV th (T L ) = f(S(T L ) × t)). Si-O bond-dispersion model explains the universal curve; therefore, the model can be used for a long term reliability projection with arbitrary combination N fin , T sub , f, etc.

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