Abstract:Abstract Self-heating effect (SHE) is a severe issue in advanced nano-scaled devices such as stacked nanosheet field-effect transistors (NS-FET), which raises the device temperature ( T D ), that ultimately affects the key electrical characteristics, i.e. threshold voltage ( V T ), DIBL, subthreshold slope (SS), I OFF , I ON , etc. SHE puts design constraints in the advanced CMOS logic devices and circuits. In this paper, we thoroughly investigated the impact of ambient temperature and interface thermal contact resistance induced-self heating effect in the NS-FET using extensive numerical simulations. The weak electron–phonon coupling, phonon scattering, and the ambient temperature-induced joule energy directly coupled with thermal contact resistance cause the SHE-induced thermal degradation, which increases the device temperature ( T D ) and affects the device reliability. The baseline NS-FET is well-calibrated with the experimental data and 3D quantum corrected drift-diffusion coupled hydrodynamic and thermodynamic transport models is used in our TCAD framework to estimate the impact of ambient temperature and interface thermal contact resistance on the device performance. Moreover, we also evaluate the SHE-induced performance comparison of NS-FET with conventional FinFET and found that thermal degradation in NS-FET potentially worsen the electrical characteristics. Thus, a detailed TCAD analysis shows that the ambient temperature and interface thermal contact resistances deteriorate the effective thermal resistance ( R eff ) and device performance metrics.

Impact Of Ambient Temperature On The Self-Heating Effects In Finfets

Electrothermal characterization of SOI FinFETs

Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs

Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Investigation of thermal stress effects on subthreshold conduction in nanoscale p-FinFET from Multiphysics perspective

Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs

Joint impact of self-heating effect and lattice stress on the design performance of Si1-xGex FinFET with advanced process integration

An investigation into the thermal surface contact resistance, fin width and temperature on negative bias temperature instability during self-heating

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Electrothermal Effects on Hot Carrier Injection in N-Type Soi Finfet under Circuit-Speed Bias

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks