Abstract:Self-heating effects (SHE) has emerged as an unfortunate corollary of confined-gate transistors (e.g. FinFET; Nanowire-FET, NWFET; NanoSheet-FET, NSHFET) needed for electrostatically-robust sub-10nm ICs [1-3]. The IC-specific SHE reflects increasing thermal resistances (Rth) associated with all three tiers (i.e., transistor, circuit, and system) of the hierarchy. Many groups have developed tier-specific thermal models, which can neither predict the junction temperature (Tj) accurately nor suggest innovative strategies to reduce Tj by identifying/removing thermal bottlenecks in the hierarchy. In this paper, we develop computationally efficient, physics-based compact models for each tier, and then stack them to estimate Tj — dictated performance/reliability of sub-10nm technologies. Specifically, we (i) refine thermal compact model for front-end-of-line (FEOL) level (TCMF) based on 3D FEM transient thermal simulations; (ii) investigate SHE by BSIM-CMG circuit simulation for ICs with refined FEOL model; (iii) develop a physics-based thermal compact model for back-end-of line (BEOL) interconnects and interposers (TCMB) by using image charge and effective medium theory (EMT). The TCMF and TCMB are then integrated to predict Tj-specific ICs reliability (i.e., NBTI, HCI, EM) for 14,10, and 7nm FinFETs, NWFETs, and NSHFETs; and finally (iv) we propose various mitigation strategies using thermal shunts to suppress SHE. Our work demonstrates that NSHFET is a good candidate at sub-10nm nodes considering both lower subthreshold swing (SS) than that of FinFET and better reliability than that of NWFET.

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Ultra Fast (<1 Ns) Electrical Characterization of Self-Heating Effect and Its Impact on Hot Carrier Injection in 14nm FinFETs

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs

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Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling