Abstract:Abstract Self-heating effect (SHE) is a severe issue in advanced nano-scaled devices such as stacked nanosheet field-effect transistors (NS-FET), which raises the device temperature ( T D ), that ultimately affects the key electrical characteristics, i.e. threshold voltage ( V T ), DIBL, subthreshold slope (SS), I OFF , I ON , etc. SHE puts design constraints in the advanced CMOS logic devices and circuits. In this paper, we thoroughly investigated the impact of ambient temperature and interface thermal contact resistance induced-self heating effect in the NS-FET using extensive numerical simulations. The weak electron–phonon coupling, phonon scattering, and the ambient temperature-induced joule energy directly coupled with thermal contact resistance cause the SHE-induced thermal degradation, which increases the device temperature ( T D ) and affects the device reliability. The baseline NS-FET is well-calibrated with the experimental data and 3D quantum corrected drift-diffusion coupled hydrodynamic and thermodynamic transport models is used in our TCAD framework to estimate the impact of ambient temperature and interface thermal contact resistance on the device performance. Moreover, we also evaluate the SHE-induced performance comparison of NS-FET with conventional FinFET and found that thermal degradation in NS-FET potentially worsen the electrical characteristics. Thus, a detailed TCAD analysis shows that the ambient temperature and interface thermal contact resistances deteriorate the effective thermal resistance ( R eff ) and device performance metrics.

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Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET

Investigation on self-heating effect in carbon nanotube field-effect transistors

Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

Impact Of Ambient Temperature On The Self-Heating Effects In Finfets

Numerical Study on the Self-Heating Effects for Vacuum/high-K Gate Dielectric Tri-Gate FinFETs

Study on the Regulation Factors and Mechanism of Self-Heating Effects in non-rectangular 14 nm Bulk FinFET

Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

Joint impact of self-heating effect and lattice stress on the design performance of Si1-xGex FinFET with advanced process integration

Analysis of thermal stability in underlap and overlap DMG FinFETs including self-heating effects

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Self-heating Induced Variability and Reliability in Advanced Logic Devices and Circuits

The Impact of Heat Loss Paths on the Electrothermal Models of Self-Heating Effects in Nanoscale Tri-Gate SOI MOSFETs

Investigation of Thermal Effects on FinFETs in the Quasi-Ballistic Regime

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect