Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation

Seungju Hwang,Ilgu Yun

DOI: https://doi.org/10.1109/iceic54506.2022.9748640

2022-02-06

Abstract:This paper presents a comparison of the self-heating effect (SHE) of analog FinFETs and gate-all-around FETs (GAAFETs) using TCAD. In addition, the analysis of dummy patterns for thermal isolation is evaluated.

What problem does this paper attempt to address?

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Ming Yi,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2010.5683047

2010-01-01

Abstract:A coupled electro-thermal-mechanical analysis of partially insulated field-effect transistors (PiFETs) is performed using the proposed hybrid nonlinear finite element method (FEM) with temperature-dependent parameters rigorously treated. The two major structures of PiFET, namely the partially insulating oxide (PiOX) under the drain and source (PUSD) and partially insulating oxide under the channel (PUC) structures are thoroughly studied. For comparison, the normal MOSFET and SOI FET are also investigated. The study of self-heating effect (SHE) in these devices indicates that the PiFET is more thermally efficient than conventional SOI device. Moreover, to fully investigate the SHE and SHE induce thermal stress, different choices of parameters related to PiOX are further studied and discussed.
Electrothermal characterization of SOI FinFETs

Peng Zhang,W.Q. Chen,Jun Hu,Wen-Yan Yin

DOI: https://doi.org/10.1109/IMWS-AMP.2016.7588321

2016-01-01

Abstract:Electrothermal characterization of the advanced SOI FinFETs is performed in this paper, which is based on some analytical equations as well as in-house developed finite difference algorithm. The temperature-dependent properties of thermal conductivities of all materials involved are considered in our simulation, with results validated by the commercial software ANSYS and other analytical solution. The self-heating effects (SHE) in such FinFET at 50nm node are further investigated, and some analytical equations are derived for fast predicting the maximum temperature in its channel. On the other hand, transient temperature response under the circuit-speed random stress is also studied, which is mimicked by the Pseudo Random Binary Sequence signal. It is found that the AC and PRBS signals introduce the similar transient temperature response, while the lower frequency signal induces the worse self-heating effect.
A comparative study of self-heating effects in 3nm node GAAFETs and FinFETs

Pan Zhao,Song-Han Zhao,Yan-Dong He,Gang Du

DOI: https://doi.org/10.1109/icsict55466.2022.9963426

2022-01-01

Abstract:In this paper, the three-dimensional 3nm node transistors are calculated by electro-thermal coupling using the TCAD simulation platform, and the thermal response characteristics of FinFETs and GAAFETs are analyzed and compared using the three-dimensional finite element simulation software. Besides, the heat dissipation path of the device is analyzed to provide guidance for the subsequent research.
Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Jianfeng Xu,Wenyan Yin,Junfa Mao

DOI: https://doi.org/10.1109/APMC.2006.4429456

2006-01-01

Abstract:In this paper, numerical investigation on GaN HFETs is carried out using hybrid finite element method (FEM) which combines the FEM with the preconditioned conjugated gradient technique. The maximum temperatures of the HFETs operating under continious-waves (CW) and pulsed-waves (PW) are both captured accurately. The effects of temperaturedependent thermal conductivities of the materials on the temperature distribtion are also studied and compared for different substrate materials, such as sapphire, silicon, and SiC. Copyright 2006 IEICE.
Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Ming Yi,Wen-Yan Yin

DOI: https://doi.org/10.1016/j.microrel.2010.12.017

IF: 1.6

2011-01-01

Microelectronics Reliability

Abstract:Using the hybrid nonlinear finite element method (FEM), electrothermomechanical analysis of partially insulated field-effect transistors (PiFETs) is performed in this paper, with their temperature-dependent material parameters treated rigorously. Two types of PiFETs, namely partially insulating oxides (PiOX) under the drain/source (PUSD) and channel (PUC), are studied and compared. The impact of self-heating effect (SHE) on their I–V characteristic, current degradation, temperature and thermal stress distribution are investigated, with some comparisons also made among normal MOSFET, PUSD PiFET, PUC PiFET and SOI FET. The influences of PiOX length, PiOX thickness, and electrode material on their maximum temperature and thermal stress are predicted, which can provide some pragmatic criterion for the development of PiFETs with good reliability.
Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Jianfeng Xu,Wen-Yan Yin,Junfa Mao,Le-Wei Li

DOI: https://doi.org/10.1093/ietele/e90-c.1.204

2007-01-01

IEICE Transactions on Electronics

Abstract:In this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared.
Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Jianfeng Xu,Wen-Yan Yin,Junfa Mao

DOI: https://doi.org/10.1109/LMWC.2006.887261

IF: 3

2007-01-01

IEEE Microwave and Wireless Components Letters

Abstract:Transient thermal analysis of GaN heterojunction field-effect transistors (HFETs) was carried out in this letter, with a hybrid nonlinear finite element method (FEM) employed, i.e., combining the element-by-element FEM with the preconditioned conjugated gradient technique. The maximum temperature of the HFETs, strongly depending on the input power density and the duration time of the pulsed heat s...
Numerical Study on the Self-Heating Effects for Vacuum/high-K Gate Dielectric Tri-Gate FinFETs

Guohe Zhang,Junhua Lai,Shengli Zhu,Sufen Wei,Feng Liang,Cheng-Fu Yang

DOI: https://doi.org/10.1016/j.microrel.2019.02.006

IF: 1.6

2019-01-01

Microelectronics Reliability

Abstract:The self-heating effects (SHEs) for Vacuum Gate Dielectric (VGD) tri-gate FinFET compared with High-k (HK) Dielectric tri-gate FinFET were investigated here based on 3D numerical electro-thermal TCAD simulation method. Simulation results show that VGD device suffers from a fiercer SHEs than HK device which will result in larger saturation current degradation. It is due to the low thermal conductivity of the gas around the channel which impedes the heat diffusion to the sinks and increases the peak temperature in the hot spot region. The SHEs can be suppressed by increasing the width of gas gap and gas pressure, based on the analysis of the pressure-dependent thermal conductivity of the gas in Nano-gap. However, the increased gas gap width entails the loss of the gate control ability over the channel resulting in the severer short channel effects.
Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET

Sihao Chen,Yu Li,Baokang Peng,Zixuan Sun,Lining Zhang,Runsheng Wang,Ru Huang

DOI: https://doi.org/10.1109/irps48228.2024.10529370

2024-01-01

Abstract:An accelerated self-heating effect (SHE) simulation methodology is presented for 3nm Gate-all-around field effect transistors (GAAFETs), which, in combination with a compact thermal model (CTM) that takes into account the geometry dependence of the device, facilitates a prompt evaluation of SHE at the device-circuit level. The physics-based four-stage CTM is developed based on different thermal dissipation paths, and an agile particle swarm optimization (PSO) scheme is adopted to extract the thermal parameters of the CTM. A two-step SPICE SHE simulation scheme with a dynamic time evolution method (DTEM) is developed by incorporating the CTM into an open model interface (OMI) simulation framework. It is implemented to evaluate the influence of SHE on the electro-thermal characteristics of circuit units, significantly improving the SHE simulation efficiency compared to the conventional subcircuit approach without sacrificing simulation accuracy.
Investigation on self-heating effect in carbon nanotube field-effect transistors

Chuan-Jia Xing,Wen-Yan Yin,Lei-Tao Liu,Jun Huang

DOI: https://doi.org/10.1109/TED.2010.2090528

IF: 3.1

2011-01-01

IEEE Transactions on Electron Devices

Abstract:Electrothermal modeling of single-walled carbon nanotube (SWCNT) field-effect transistor (FET) is performed in this paper, with special attention focused on its self-heating effect. The method of finite difference is implemented for solving a 1-D heat conduction equation in the semiconducting channel self-consistently, and its nonuniform temperature distribution is evaluated for 20-, 32-, and 45-nm technology nodes, respectively. The numerical results are presented to show the self-heating effect on the I-V characteristics, signal delay, and cutoff frequency of the carbon nanotube FET (CNTFET). It is further demonstrated that the maximum temperature rise, as well as the performance degradation of the CNTFET, is quite lower than that of the silicon-based FET counterpart. All these advantages are contributed by the excellent electrothermal properties of the SWCNTs, and they have great potential for the development of active devices with low power dissipation and good reliability at high-operating temperature. © 2006 IEEE.
Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Longxiang Yin,Lei Shen,Hai Jiang,Gang Du,Xiaoyan Liu

DOI: https://doi.org/10.1007/s11432-016-9106-x

2017-01-01

Science China Information Sciences

Abstract:In this paper, self-heating effects (SHE) in nanoscale Ge p-channel FinFETs with Si substrate are evaluated by TCAD simulation. Hydrodynamic transport with modified mobilities and Fourier´s law of heat conduction with modified thermal conductivities are used in the simulation. Ge p-channel single-fin FinFET devices with different S/D extension lengths and fin heights, and multi-fin FinFETs with different fin numbers and fin pitches are successively investigated. Boundary thermal resistances at source, drain and gate contacts are set to 2000 μm2K/W and the substrate thermal boundary condition is set to 300 K so that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below: (i) 14 nm Ge p-channel single-fin FinFETs with a 47 nm fin pitch experience 9.7% on-state current degradation. (ii) Considering the same input power, FinFETs with a longer S/D extension length show a higher lattice temperature and a larger on-state current degradation. (iii) Considering the same input power, FinFETs with a taller fin height show a higher lattice temperature. (iv) The temperature in multi-fin FinFET devices will first increase then saturate with the increasing fin number. At last, thermal resistances in Ge p-channel single-fin FinFETs and multi-fin FinFETs are investigated.
Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs

M. Hemalatha,N. B. Balamurugan,M. Suguna,D. Sriram Kumar

DOI: https://doi.org/10.1007/s12633-023-02835-3

IF: 3.4

2024-01-06

Silicon

Abstract:The self-heating effect (SHE) poses a significant obstacle for ultra-scaled devices, including Fin Field Effect Transistors (FinFETs) designed for sub-nanometer technology. This study investigates the impact of variations in fin thickness and self-heating on the output characteristics of Triangular Gate FinFETs (TG-FinFET) and the resulting lattice temperature. The effect of modifications in various dimensions and self-heating on the output properties and lattice temperature of FinFET devices is examined. This work examines the impacts of Self-Heating Effects (SHEs) on the average electron velocity and mobility. According to the findings, SHE causes an average electron velocity decrease and an average electron mobility deterioration of on average. The findings of this research will contribute to the development of more advanced and efficient FinFET designs.

materials science, multidisciplinary,chemistry, physical
Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Huali Duan,Erping Li,Qinyi Huang,Yuehang Xu,Wenchao Chen

DOI: https://doi.org/10.1016/j.mejo.2024.106286

IF: 1.992

2024-01-01

Microelectronics Journal

Abstract:Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in nanoscale transistors within heterogeneous integrated circuit is still very limited up to now. Multiphysics computation for the heterogeneous integration of nanoscale p-FinFET with GaN high electron mobility transistor (HEMT) on silicon substrate is performed. Firstly, self-heating of GaN HEMT induced thermal stress is simulated. Then, thermal stress effects induced by the GaN HEMT on quantum transport in the FinFET at different locations are compared and analyzed, including the hole effective mass, hole average velocity, on/off-state current, and on-off ratio. Moreover, the impacts of crystal orientation configurations are further discussed. Simulation results show that the impact of thermal stress on FinFET is highly dependent on the Si crystal orientation and its location relative to GaN HEMT. Taking the FinFET with (001)/[110] confinement/transport orientation, which is at a distance of R FET and an angle of φ from the GaN HEMT as an example, thermal stress induces the significant reductions in I on and I off of FinFET at φ = π/2 and φ = 3π/2, and the increases of I on and I off in FinFET at φ = 0 and φ = π, but has small impact on FinFETs located diagonally to the GaN HEMT.
Analytical Thermal Model for Self-Heating Effects in Advanced FinFET Devices

Zhihui Kang,Min Tang,Junfa Mao,Yang Tang,Haikun Yue

DOI: https://doi.org/10.1109/icta48799.2019.9012894

2019-01-01

Abstract:An analytical thermal model for self-heating effects in advanced FinFET devices is proposed in this paper. The heat generation profiles of FinFET under different source/drain doping concentrations and bias voltages are investigated. Based on the curve fitting of heat source distribution of device and the extraction of equivalent lumped thermal resistances, a one-dimensional (1-D) analytical thermal model is developed for efficient simulation of self-heating effects in FinFETs. The accuracy of the proposed model are verified by the commercial solver COMSOL.
Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

hai jiang,nuo xu,bing chen,lang zeng,yandong he,gang du,xiaoyan liu,xing zhang

DOI: https://doi.org/10.1088/0268-1242/29/11/115021

IF: 2.048

2014-01-01

Semiconductor Science and Technology

Abstract:In this work, the self-heating effect (SHE) on metal gate multiple-fin SOT FinFETs is studied by adopting the ac conductance technique to extract the thermal resistance and temperature rise in both n-channel and p-channel SOT FinEETs with various geometry parameters. It is shown that the SHE degrades by over 10% of the saturation output current in the n-channel and by over 7% in the p-channel. The extracted thermal resistances R-th increase with the scaled down gate length, reducing the number of fin and shrinking the fin width. The temperature rise caused by the SHE increases with the scaled down gate length, increasing the number of fin and shrinking the fin width under the saturated operation condition. Additionally, due to a larger power density in the n-channel SOT FinEETs under the same bias condition, the temperature in the n-channel FinEETs is higher than that in the p-channel FinEETs. Because the Si thermal conductivity decreases as the temperature increases, R-th is larger in the n-channel FinEETs than in the p-channel FinEETs. Therefore, tradeoffs have to be made between the thermal properties and the device's electrical performance by careful design optimizations of SOT FinEETs.
TCAD Temperature Analysis of Gate Stack Gate All Around (GS-GAA) FinFET for Improved RF and Wireless Performance

Bhavya Kumar,Rishu Chaujar

DOI: https://doi.org/10.1007/s12633-021-01040-4

IF: 3.4

2021-03-09

Silicon

Abstract:In this article, we investigated the impact of temperature variation on DC, analog, RF, and wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas 3D simulator. The GAA structure introduction enhances the switching ratio (Ion/Ioff) by ∼152.37% and reduces the subthreshold swing (SS) by ∼6.5%. At gate voltage (Vgs) ∼ 0.725 V, the GS-GAA FinFET device exhibits the ZTC (Zero-Temperature-Coefficient) bias point, i.e., the effect of temperature on drain current gets nullified. DC parameters such as leakage current (Ioff), on current (Ion), SS, and threshold voltage (Vth) deteriorate with the rise in temperature. The enhancement in temperature degrades the RF and analog performance of the device by suppressing the parameters like transconductance (gm), device efficiency (TGF), cut-off frequency (fT), gain frequency product (GFP), gain-bandwidth product (GBP), etc. The device's wireless performance is analyzed using linearity and harmonic distortion parameters such as gm3, gm2, 1-dB compression point, IIP3, VIP3, VIP2, IMD3, HD3, and HD2, and it shows significant improvement as the temperature increases from 300 K to 500 K.

materials science, multidisciplinary,chemistry, physical
Analysis of thermal stability in underlap and overlap DMG FinFETs including self-heating effects

Rashi Chaudhary,Rajesh Saha,Menka Yadav

DOI: https://doi.org/10.1016/j.mejo.2024.106152

IF: 1.992

2024-04-01

Microelectronics Journal

Abstract:This work investigates the impact of the self-heating effect (SHE) on SOI Dual-Material Gate (DMG) FinFETs with channel engineering including gate underlapped and overlapped structures. Both these structures are compared with conventional DMG FinFET to detect the possible effects of SHE on DC characteristics and thermal parameters. The drop rates of ON current (ION), Off-current (IOFF), Maximum transconductance (gm,max), ION/IOFF ratio, and Drain-induced barrier lowering (DIBL) are calculated to get the precise results. For extensive thermal reliability analysis, the two main distinguishing parameters lattice temperature and thermal resistance are also calculated and their dependency with gate/drain bias and operating temperature are also explored. Comparison between thin and thick BOX devices aimed at distinguishing possible effects of SHE on BOX thickness variation. The result shows that the SHE greatly improves ION/IOFF ratio by 220.8% in gate underlap structure due to large reduction in leakage current. Although lattice temperature is higher in gate overlap structure but thermal resistance decreases by 53.6 % due to its high ON current. Using high-k dielectric BOX materials, small improvement in device SHE characteristics is also accomplished.

engineering, electrical & electronic,nanoscience & nanotechnology
Impact Of Ambient Temperature On The Self-Heating Effects In Finfets

Longxiang Yin,Gang Du,Xiaoyan Liu

DOI: https://doi.org/10.1088/1674-4926/39/9/094011

2018-01-01

Journal of Semiconductors

Abstract:We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-heating effect (SHE) in 14 nm bulk nFinFETs with ambient temperature (T-A) from 220 to 400 K. Based on this method, nonlocal heat generation can be achieved. Contact thermal resistances of Si/Metal and Si/SiO2 are selected to ensure that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below: (i) not all input power (Q(input)) turns into heat generation in the device region and some is taken out by the thermal non-equilibrium carriers, owing to the serious non-equilibrium transport; (ii) a higher T-A leads to a larger ratio of input power turning into heat generation in the device region at the same operating voltages; (iii) SHE can lead to serious degradation in the carrier transport, which will increase when T-A increases; (iv) the current degradation can be 8.9% when V-ds = 0.7 V, V-gs = 1 V and T-A = 400 K; (v) device thermal resistance (R-th) increases with increasing of T-A, which is seriously impacted by the non-equilibrium transport. Hence, the impact of T-A should be carefully considered when investigating SHE in nanoscale devices.
The Impact of Heat Loss Paths on the Electrothermal Models of Self-Heating Effects in Nanoscale Tri-Gate SOI MOSFETs

Yali Su,Junhua Lai,Feng Liang

DOI: https://doi.org/10.1587/elex.15.20180905

2018-01-01

IEICE Electronics Express

Abstract:Nanoscale tri-gate SOI MOSFETs attract much attention in terms of the significance of self-heating effects (SHEs) which severely influence the operation stability and device reliability. Here, the impacts of the heat loss paths associated with the SHEs in nanoscale tri-gate SOI MOSFETs are comprehensively analyzed considering the gate dissipation channels (GDCs). The thermal resistance network model and thermal resistance model are presented to illustrate the heat dissipation mechanisms. 3D electro-thermal TCAD simulation results show that the heat flux through the GDCs occupies most part of the total heat dissipation. The static peak temperature can be decreased by decreasing the gate oxide thickness and increasing the cross-section of Fin area of tri-gate devices.
Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Pan Zhao,Songhan Zhao,Taoyu Zhou,Naiqi Liu,Xinpeng Li,Yandong He,Gang Du

DOI: https://doi.org/10.1109/cstic61820.2024.10531951

2024-01-01

Abstract:As a candidate device for a 3nm node, due to the presence of dielectric wall in the device, Forksheet Field Effect Transistors (FSFETs) have more severe self-heating and thermal crosstalk than ordinary Complementary FET (CFET). The impacts of related geometric shape and nanosheet size of dielectric walls are presented, providing guidance for self-heating effects (SHE) in device design. A thermal network model for Forksheet devices is proposed to quickly evaluate temperature changes under AC conditions. The results indicate that high attention should be paid to the self-heating of Forksheet devices.

Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermal characterization of SOI FinFETs

A comparative study of self-heating effects in 3nm node GAAFETs and FinFETs

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Numerical Study on the Self-Heating Effects for Vacuum/high-K Gate Dielectric Tri-Gate FinFETs

Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET

Investigation on self-heating effect in carbon nanotube field-effect transistors

Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Analytical Thermal Model for Self-Heating Effects in Advanced FinFET Devices

Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

TCAD Temperature Analysis of Gate Stack Gate All Around (GS-GAA) FinFET for Improved RF and Wireless Performance

Analysis of thermal stability in underlap and overlap DMG FinFETs including self-heating effects

Impact Of Ambient Temperature On The Self-Heating Effects In Finfets

The Impact of Heat Loss Paths on the Electrothermal Models of Self-Heating Effects in Nanoscale Tri-Gate SOI MOSFETs

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors