Abstract:As the power density of GaN HEMT devices increases, its internal operating temperature increases sharply, which would affect the electrical characteristics of devices and greatly limit the service life. The operating temperature has become an important technical index to evaluate the thermal design level of GaN HEMT devices. In this work, a high-speed transient thermal simulation method for GaN HEMT devices is proposed to enable the finite element thermal analysis with high efficiency and accuracy. Based on the law of energy conservation, the functional relationship between the trough temperature and time of the transient operation is built. Then the transient trough temperature is calculated using the limit solution algorithm when the device reaches a stable state, and the initial temperature of the model is set by loading a constant temperature heat source. The finite element analysis software FloTHERM is used to calculate a small number of pulse stress cycles and then quickly obtain the transient temperature field of the dynamic equilibrium state of GaN HEMT device. It is found that the fitting degree is very high compared with the traditional simulation method. This method effectively obtains the transient temperature distribution of GaN HEMT device at any time after dynamic equilibrium, but also avoids the calculation process over ten million cycles before reaching dynamic temperature equilibrium and greatly reduces the simulation time and computational cost.

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Analysis of the Thermal Effects of Gaasfets under the High-Power Electromagnetic Pulses

Thermal modeling, analysis, and management of high-power GaN transistors

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Thermal Transient Response Of Gaas Fets Under Intentional Electromagnetic Interference (Iemi)

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

High Speed Transient Thermal Simulation of GaN HEMT Devices

Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Two-temperature Principle for Evaluating Electrothermal Performance of GaN HEMTs

Research and Application of Temperature-sensitive Characteristics of Gate Parameters in GaN high electron mobility transistors

Nonlinear Thermal Analysis of AlGaN/GaN HEMTs With Temperature-Dependent Parameters

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor