Abstract:Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on Gallium Nitride High Electron Mobility Transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 x1012 to 3.76x1014 cm-2, and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. HRTEM (High-Resolution Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy) analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (~ 750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

Device Physics And Performance Potential Of Iii-V Field-Effect Transistors

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Experimental study of the Single Event Effects in E-mode GaN HEMT with Heavy Ion Irradiation

Transient Current in Graphene Transistors Under Single- Proton Irradiation

Two-Dimensional Numerical Simulation Study on the Synergistic Effects of Transient Ionizing Radiation and Electromagnetic Pulse on Bipolar Junction Transistor

Simulation and Analysis of Inverse-Mode Operation of Single Event Transient Mechanisms on NPN-SiGe HBT

Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

Analysis of single event effects by heavy ion irradiation of Ga2O3 metal–oxide–semiconductor field-effect transistors

High Speed Transient Thermal Simulation of GaN HEMT Devices

Transient Current Analysis of GaN Neutron Detector Based on the SRIM and TCAD Methods

Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions

Current Transients in Graphene Electronics under Single‐Particle Irradiation

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors