Abstract:As the power density of GaN HEMT devices increases, its internal operating temperature increases sharply, which would affect the electrical characteristics of devices and greatly limit the service life. The operating temperature has become an important technical index to evaluate the thermal design level of GaN HEMT devices. In this work, a high-speed transient thermal simulation method for GaN HEMT devices is proposed to enable the finite element thermal analysis with high efficiency and accuracy. Based on the law of energy conservation, the functional relationship between the trough temperature and time of the transient operation is built. Then the transient trough temperature is calculated using the limit solution algorithm when the device reaches a stable state, and the initial temperature of the model is set by loading a constant temperature heat source. The finite element analysis software FloTHERM is used to calculate a small number of pulse stress cycles and then quickly obtain the transient temperature field of the dynamic equilibrium state of GaN HEMT device. It is found that the fitting degree is very high compared with the traditional simulation method. This method effectively obtains the transient temperature distribution of GaN HEMT device at any time after dynamic equilibrium, but also avoids the calculation process over ten million cycles before reaching dynamic temperature equilibrium and greatly reduces the simulation time and computational cost.

High Speed Transient Thermal Simulation of GaN HEMT Devices

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Thermal modeling, analysis, and management of high-power GaN transistors

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs.

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Thermal Transient Analysis of GaN-based HEMTs Based on Spectral-Element Method

Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices

Thermal Analysis of GaN HEMTs Using Nongray Multi-Speed Phonon Lattice Boltzmann Method under Joule Heating Effect

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

Electrothermal Simulation Analysis of GaN HEMT with RF Dynamic Current

Evaluation and Analysis of Temperature-Dependent Dynamic $r_{{{\mathrm{ds}}},{{\mathrm{on}}}}$ of GaN Power Devices Considering High-Frequency Operation

Thermal Evaluation of GaN-based HEMTs with Various Layer Sizes and Structural Parameters Using Finite-Element Thermal Simulation

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor

B13-P-01Temperature Characterization of Self-heating in GaN-based Transistors by Cathodeluminescence Spectroscopy

Junction Temperature Measurement for HEMT Devices with Small Size Gate

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Research and Application of Temperature-sensitive Characteristics of Gate Parameters in GaN high electron mobility transistors