Abstract:Exact assessment of self-heating is of great importance to the thermal management of electronic devices, especially when completely considering the cross-scale heat conduction process. The existing simulation methods are either based on convectional Fourier's law or limited to small system sizes, making it difficult to deal with noncontinuum thermal transport efficiently. In this paper, a hybrid phonon Monte Carlo diffusion method is adopted to predict device temperature in ballistic-diffusive regime. Heat conduction around the heat generation region and boundaries are simulated by phonon Monte Carlo (MC) method, while the other domain is by Fourier's law. The temperature of the hybrid method is higher than that of Fourier's law owing to phonon ballistic transport, and the calculation efficiency of the hybrid method is remarkably improved compared with phonon MC simulation. Furthermore, the simulation results indicate that the way of modeling self-heating has a remarkable impact on phonon transport. The junction temperature of the heat source (HS) scheme can be larger than that of the heat flux (HF) scheme, which is opposite to the result under Fourier's law. In the HS scheme, the enhanced phonon-boundary scattering counteracts the broadening of the heat source, leading to a stronger ballistic effect and higher temperatures. The conclusion is verified by a one-dimensional analytical model. This work has opened up an opportunity for the fast and extensive thermal simulations of cross-scale heat transfer in electronic devices and highlighted the influence of heating schemes.

Electro-Thermal Simulation of GaN HEMT Based on a Scaling-Factor-Enhanced Time-Domain Spectral Element Solver

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

High Speed Transient Thermal Simulation of GaN HEMT Devices

Large-Scale Parallel DGTD and FETD Method for Transient Microwave Heating

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

Nonlinear Thermal Analysis of AlGaN/GaN HEMTs With Temperature-Dependent Parameters

Thermal spreading resistance of GaN HEMTs with heat source heating studied by hybrid Monte Carlo-diffusion simulations

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Full Geometric Simulation of Miniaturized GaN Double-Heterojunction High Electron Mobility Transistors by a Multiscale Approach Coupling Quantum and Semi-Classical Transport

Hybrid Monte Carlo-Diffusion Studies of Modeling Self-Heating in Ballistic-Diffusive Regime for Gallium Nitride HEMTs

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Full 3D Thermal Simulation of GaN HEMT using Ultra-Fast Self-Adaptive Computations Driven by Experimentally Determined Thermal Maps

Two-temperature Principle for Evaluating Electrothermal Performance of GaN HEMTs