Abstract:Due to the advantages of high power density, high efficiency, and great potential in extreme temperature environments, the GaN high electron mobility transistor (HEMT) device is widely used in circuit systems at high or low temperatures. However, its electrical performance is sensitive to the ambient temperature. Therefore, it is essential to build a model that can accurately characterize the electrical performance of GaN HEMTs at different ambient temperatures, which is also essential for precise circuit design. With the analysis of experiment and theory on the GaN HEMT at different ambient temperatures, an improved model for temperature effect on the DC characteristics of the GaN HEMT is proposed based on EEHEMT model. Considering the influence of the ambient temperature on electrical properties of the GaN HEMT, such as the threshold voltage, the knee voltage, and the saturated current, the model establishes a temperature-dependent function for key parameters in the formula of the drain-source current. Through Verilog-A implementation and simulation on the ICCAP software, the improved model accurately reflects the trend of the electrical performance changes of the GaN HEMT at different ambient temperatures. To further verify the model in this work, the on-wafer measurements at different temperatures including -55, -25, 25 and 75 degrees C are carried out for GaN HEMTs with different sizes, which are developed by Nanjing Electronic Devices Institute. Compared with the measured data, the output characteristics and the transfer characteristics simulated by the proposed model are accurate in an ambient temperature range of -55-75 degrees C, with a relative fitting error less than 5%. The result shows that the improved model is of guiding significance in analyzing the direct current performance and high reliability design of circuits at different temperatures.

Research and Application of Temperature-sensitive Characteristics of Gate Parameters in GaN high electron mobility transistors

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

A comparative study on electrothermal characteristics of nanoscale multiple gate MOSFETs.

Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Steady-State Temperature-Sensitive Electrical Parameters' Characteristics of GaN HEMT Power Devices

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current

High Speed Transient Thermal Simulation of GaN HEMT Devices

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Electro-Thermal Simulation of GaN HEMT by Finite Element Method

Modeling of Temperature Effect on DC Characteristics of Micro Wave GaN Devices

Two-temperature Principle for Evaluating Electrothermal Performance of GaN HEMTs

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance