Abstract:Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of GaN HEMT has become a crucial factor in device reliability. Since the junction temperature monitoring technology for GaN HEMT based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage, the TSEPs' characteristics of GaN HEMT have not been definitively established. In this paper, for the common steady-state TSEPs of GaN HEMT, the variation rules of the saturation voltage with low current injection, threshold voltage, and body-like diode voltage drop with temperature are investigated. The influences on the three TSEPs' characteristics are considered, and their stability is discussed. Through experimental comparison, it is found that the saturation voltage with low current injection retains favorable temperature-sensitive characteristics, which has potential application value in junction temperature measurement. However, the threshold voltage as a TSEP for certain GaN HEMT is not ideal in terms of linearity and stability.

What problem does this paper attempt to address?

The paper primarily explores the characteristics of steady-state Temperature-Sensitive Electrical Parameters (TSEPs) of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) power devices under different temperatures. GaN HEMTs are favored in various scenarios due to their high power density and efficiency. However, as the heat flux density significantly increases, the junction temperature of GaN HEMTs becomes a critical factor affecting device reliability. Given that the junction temperature monitoring technology based on TSEPs is still in the exploratory stage, the paper investigates common steady-state TSEPs, including the relationship between saturation voltage under low current injection, threshold voltage, and body diode voltage drop with temperature changes. The study considers the impact of these parameter characteristics and discusses their stability. Experimental comparisons reveal that the saturation voltage under low current injection maintains good temperature-sensitive characteristics, showing potential application value in junction temperature measurement. However, for some GaN HEMTs, the threshold voltage as a TSEP is not ideal in terms of linearity and stability. Specifically, the main objectives of the paper can be summarized as follows: 1. **Explore the temperature-sensitive electrical parameters of GaN HEMT power devices**: Analyze the variation patterns of parameters such as saturation voltage under low current injection, threshold voltage, and body diode voltage drop with temperature. 2. **Evaluate the characteristics of temperature-sensitive electrical parameters**: Examine the impact of temperature changes on these parameters and their stability to determine their suitability as temperature monitoring means. 3. **Verify the practical application value of temperature-sensitive electrical parameters**: Through experimental comparisons, assess the potential of different parameters as indicators for junction temperature monitoring. In summary, this paper aims to deepen the understanding of the steady-state temperature-sensitive electrical parameters of GaN HEMTs through experimental research, laying the foundation for further development of effective junction temperature monitoring methods.

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