Abstract:This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship with the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}$</tex> . For <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}=27 \mu\mathrm{m}$</tex> , the device exhibits a high breakdown voltage of 1412 V. The threshold voltage is 0.9 V. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{on}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$17.7\ \ \Omega\cdot \text{mm}$</tex> , and the specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{sp}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6.73\ \mathrm{m}\Omega\cdot \text{cm}^{2}$</tex> . To measure the depletion region directly for high-voltage devices, depletion-testing structures were fabricated alongside the HEMTs. The depletion lengths were determined based on the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics of the structures, with the pinch-off voltage of the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics correlated to the depletion length. Additionally, using pulse waveforms as the gate control signals, the formation of the depletion region under dynamic conditions was revealed.

Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Abnormal On Current Tendency in Saturation Region between High and Light Carbon Doped buffer layer in p-GaN HEMT

Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain

An Extensive Negative Gate Bias Stress Degradation Mechanism in GaN MIS-HEMTs for Aerospace Applications

Low-Frequency Noise Characterization of Hot-Electron Degradation in Gan-Based Hemts

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Degradation Behavior and Mechanism of GaN HEMTs with P-Type Gate in the Third Quadrant under Repetitive Surge Current Stress

Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

Temperature Dependence and Thermal Stability of Planar-Integrated Enhancement/Depletion-Mode Algan/Gan Hemts and Digital Circuits

Alleviation of the on-state dynamic conductance decline in a GaN high electron mobility transistor with heavy carbon doping

Steady-State Temperature-Sensitive Electrical Parameters' Characteristics of GaN HEMT Power Devices

Temperature-Dependent Gate Degradation of P-Gan Gate HEMTs under Static and Dynamic Positive Gate Stress

Method to Study Dynamic Depletion Behaviors in High-Voltage (<tex>$BV=1.4\ \text{kV}$</tex>) p-GaN Gate HEMT on Sapphire Substrate