Abstract:Based on the drift-diffusion transport model, Fermi-Dirac statistics and Shockley-Read-Hall recombination model, the effect of the structure parameters on the performance of N-polar GaN/InAlN high electron mobility transistor is investigated by self-consistently solving the Schrodinger equation, Poisson equation and carrier continuity equation. The results indicate that the saturation current density of the device increases and the threshold voltage shifts negatively with GaN channel thickness increasing from 5 nm to 15 nm and InAlN back barrier thickness increasing from 10 nm to 40 nm. The maximum transconductance decreases with GaN channel thickness increasing or InAlN back barrier thickness decreasing. The change trends of the various performance parameters become slow gradually with the increase of the thickness of the GaN channel layer and InAlN back barrier layer. When the GaN channel thickness is beyond 15 nm or the InAlN back barrier thickness is more than 40 nm, the saturation current, the threshold voltage and the maximum transconductance tend to be stable. The influence of the structure parameter on the device performance can be mainly attributed to the dependence of the built-in electric field, energy band structure and the two-dimensional electron gas (2DEG) on the thickness of the GaN channel layer and InAlN back barrier layer. The main physical mechanism is explained as follows. As the GaN channel thickness increases from 5 nm to 15 nm, the bending of the energy band in the GaN channel layer is mitigated, which means that the total built-in electric field in this layer decreases. However, the potential energy drop across this GaN channel layer increases, resulting in the fact that the quantum well at the GaN/InAlN interface becomes deeper. So the 2DEG density increases with GaN channel thickness increasing. Furthermore, the saturation current density of the device increases and the threshold voltage shifts negatively. Moreover, due to the larger distance between the gate and the 2DEG channel, the capability of the gate control of the high electron mobility transistor decreases. Similarly, the depth of the GaN/InAlN quantum well increases with InAlN back barrier thickness increasing from 10 nm to 40 nm, which results in the increase of the 2DEG concentration. Meanwhile, the electron confinement in the quantum well is enhanced. Therefore the device saturation current and the maximum transconductance increase with InAlN back barrier thickness increasing.

Alleviation of the on-state dynamic conductance decline in a GaN high electron mobility transistor with heavy carbon doping

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

Effect of Structure Parameters on Performance of N-polar GaN/InAlN High Electron Mobility Transistor

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

The Movement of the Fermi Level in Heavily C Doped GaN

Current Transport Dynamics and Stability Characteristics of the NiO X Based Gate Structure for Normally-off GaN HEMTs

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Charge Detrapping on Gate Edge of AlGaN/GaN HEMT Under Drain Stress

Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface