Abstract:Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs) determine the semi-insulating behavior of carbon-doped GaN (GaN:C) layers and are still debated. Two models are discussed; both can theoretically achieve semi-insulating behavior: the dominant acceptor model (DAM, DAR < 1) and the auto-compensation model (ACM, DAR = 1). We perform a capacitance–voltage analysis on metal/GaN:C/nGaN (n-doped GaN) structures, exhibiting Fermi-level pinning in GaN:C, 0.7 eV above the valence band maximum. This observation coupled with further interpretation clearly supports the DAM and contradicts the ACM. Furthermore, we reveal a finite depletion width of a transition region in GaN:C next to nGaN, where carbon acceptors drop below the Fermi level becoming fully ionized. Calculation of the potential drop in this region exhibits DAR values of 0.5–0.67 for GaN:C with total carbon concentrations of 10 18 cm − 3 and 10 19 cm − 3. Based on those results, we re-evaluate formerly published density functional theory (DFT)-calculated formation energies of point defects in GaN. Unexpectedly, growth in thermodynamic equilibrium with the bulk carbon phase contradicts our experimental analysis. Therefore, we propose the consideration of extreme carbon-rich growth conditions. As bulk carbon and carbon cluster formation are not reported to date, we consider a metastable GaN:C solid solution with the competing carbon bulk phase being kinetically hindered. DFT and experimental results agree, confirming the role of carbon at nitrogen sites as dominant acceptors. Under N-rich conditions, carbon at gallium sites is the dominant donor, whereas additional nitrogen vacancies are generated under Ga-rich conditions.

Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

Off-State Electrical Breakdown of Algan/Gan/Ga(Al)N Hemt Heterostructure Grown on Si(111)

Alleviation of the on-state dynamic conductance decline in a GaN high electron mobility transistor with heavy carbon doping

Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors

Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction

The Effect of Kink and Vertical Leakage Mechanisms in GaN-on-Si Epitaxial Layers

Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Reverse Leakage Mechanism of Schottky Barrier Diode Fabricated on Homoepitaxial Gan

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

Lithium Intercalation Induced Decoupling of Epitaxial Graphene on SiC(0001): Electronic Property and Dynamic Process

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Establishment of Composite Leakage Model and Design of GaN Schottky Barrier Diode with Stepped Field Plate

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

High-mobility N−-Gan Drift Layer Grown on Si Substrates

Role of Electron Injection on Vertical Leakage in GaN-on-Si Epitaxial Layers

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates