Abstract:Electrically active defects in carbon-doped GaN layers were studied with a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) MIS structure. The GaN:C layers were grown with three different carbon doping concentrations (NC). A semi-vertical metal/semi-insulator/n-type semiconductor (MIS) device was fabricated to perform deep-level transient spectroscopy (DLTS) measurements. Two electron traps E1 and E2 with energy level at EC − (0.22–0.31) eV and EC − (0.45–0.49) eV were observed. E1 and E2 are associated with a nitrogen vacancy VN-related defect in the strain field of extended defects and a nitrogen antisite defect, respectively. By changing the reverse bias voltage of the DLTS measurement, the location and relative defect concentration of the E1 and E2 traps could be verified. A dominant electron trap E3 with an unusual capture cross section was only observed in devices with an NC = 2 × 1019 cm−3 GaN:C layer. This may charge carriers from a defect band and lead to the charge redistribution in the GaN:C layer when forward biased. A hole trap H1 with energy level at EV + 0.47 eV was found for the pulse bias in the forward ON-state. H1 is suggested to correspond with the CN induced 0/+ donor level. By analyzing the schematic band diagrams across the MIS structure, the carrier transport and defect charging mechanisms underlying the DLTS transient measurements are illustrated. The identification of the trap states in the carbon-doped GaN with different NC gives further understanding on the carbon doping impact on electric characteristics of GaN power devices made on Si substrates.

High-mobility N−-Gan Drift Layer Grown on Si Substrates

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Low RF Loss and Low Dislocation Density of GaN Grown on High-Resistivity Si Substrates

High electron mobility in free-standing GaN substrates

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Epitaxy of GaN in High Aspect Ratio Nanoscale Holes over Silicon Substrate

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy