Abstract:We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a GaN(0001) layer with a deeply buried (In,Ga)N quantum well. Varying the acceleration voltage of the primary electrons and comparing the signal from the layer and the quantum well enables us to probe carrier recombination at depths ranging from the close vicinity of the surface to the position of the quantum well. Our experiments are accompanied by fully three-dimensional Monte Carlo simulations of carrier drift, diffusion, and recombination in the presence of the surface, the quantum well, and the dislocation, taking into account the dislocation strain field and the resulting piezoelectric field at the dislocation outcrop. Near the surface, this field establishes an exciton dead zone around the dislocation, the extent of which is not related to the carrier diffusion length. However, reliable values of the carrier diffusion length can be extracted from the dipole-like energy shift observed in hyperspectral cathodoluminescence maps recorded around the dislocation outcrop at low acceleration voltages. For high acceleration voltages, allowing us to probe a depth where carrier recombination is unaffected by surface effects, we observe a much stronger contrast than expected from the piezoelectric field alone. This finding provides unambiguous experimental evidence for the strong nonradiative activity of edge threading dislocations in bulk GaN and hence also in buried heterostructures.

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

High-mobility N−-Gan Drift Layer Grown on Si Substrates

Carrier transport and luminescence properties of n-type GaN

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Relationship of Background Carrier Concentration and Defects in GaN Grown by Metalorganic Vapor Phase Epitaxy

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Dynamics of Photoexcited Carriers in AlxGa1−xN/GaN Double Heterostructures

Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

Formation Mechanism of a Degenerate Thin Layer at the Interface of a GaN/sapphire System

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

High electron mobility in free-standing GaN substrates

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Thermally Activated Carrier Transfer Processes in InGaN∕GaN Multi-Quantum-well Light-Emitting Devices

Influence of N2H2 carrier gas ratio on the properties of undoped GaN material