Abstract:The formation of a two-dimensional electron gas (2DEG) at the GaN (0001)/AlN interface holds significant implications for GaN-based high-voltage and high-frequency (RF) devices. Due to the promising results provided by the addition of a thin layer of AlN in metal–oxide-semiconductor channel high-electron-mobility transistor devices, this interface can be found in both the access region and near the dielectric gate. Recent ab initio simulations shed light on the crucial role played by spontaneous and piezoelectric polarizations within polar GaN and AlN crystals in driving the formation of the 2DEG. This study explores the underlying mechanisms behind the 2DEG formation and investigates the impact of fixed charges and additional layers, like Al2O3, on the carrier concentration. Consistent with the literature, our findings highlight the predominant role of polarizations within III–V materials in the formation of the 2DEG. Moreover, we examine the influence of fixed charges on the AlN surface, revealing their ability to accumulate or deplete the 2DEG, while maintaining charge conservation through the emergence of a new two-dimensional charge gas on the AlN surface. Additionally, we explore the effects of incorporating a β-Al2O3 crystal layer on the GaN/AlN structure, finding that the 2DEG’s carrier density is reduced, yet not entirely eliminated, while a significant positive charge concentration at the AlN/Al2O3 interface pins the Fermi level. This comprehensive investigation contributes to our understanding of microscopic phenomena in III–V heterostructures, paving the way for future advancements and applications in power electronics.

Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Electron Mobility in Polarization-Doped Al0-0.2GaN with a Low Concentration Near 1017 Cm−3

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Very High Channel Conductivity In Ultra-Thin Channel N-Polar Gan/(Aln, Inaln, Algan) High Electron Mobility Hetero-Junctions Grown By Metalorganic Chemical Vapor Deposition

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Two-Dimensional Electron Gas Materials with AlN/GaN Superlattice Structure Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Two-dimensional carrier gas at a polar interface without surface band gap states: A first-principles perspective

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Magneto-transport Properties of MOVPE-grown Al X Ga 1-X N/AlN/GaN Heterostructures with High-Mobility Two-Dimensional Electron Gas