Abstract:Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in Si-doped film, revealing the effect of Si doping. With decrease of N2 from 100% to 75%, the carrier concentration of Si-doped films increased from ~7 x 1018 cm-3 to ~2 x 1019 cm-3, but remained practically unchanged as N2 was decreased to 20%, which is explained by effects due to saturation of Si doping and increase of Ga interstitials as well as compensation by N interstitials and Ga vacancies. Undoped and Si-doped films grown below 20% N2 displayed similar carrier concentrations (~1020 cm-3), due to dominance of Ga interstitials. Both undoped and Si-doped films were degenerate and displayed increase of mobility with carrier concentration and temperature, which was analyzed by the combined effect of ionized impurity and dislocation scattering, using compensation ratio as fitting parameter. At carrier concentrations below 1019 cm-3, the mobility was governed by both ionized impurity and dislocation scattering, while at higher carrier concentrations, ionized impurity scattering was found to dominate, limited by compensation due to acceptors. In spite of the degenerate character, the films displayed a small decrease of carrier concentration with temperature, along with a nearly linear decrease of mobility, which are explained by a marginal increase of compensation ratio with decrease of temperature, taking into account the band edge fluctuation effects.

High electron mobility in free-standing GaN substrates

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

High-mobility N−-Gan Drift Layer Grown on Si Substrates

Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Growth and Characterization of Bulk GaN by Ga Vapor Transport

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in AlGaAs/GaAs quantum wells grown by MBE

High Mobility Single-Crystalline-like Germanium Thin Films on Flexible, Inexpensive Substrates

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Synthesis And Properties Of Hvpe Nitride Substrates

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

High-Resistivity Gan Homoepitaxial Layer Studied by Schottky Diode Structure