Abstract:Gallium nitride (GaN), aluminum nitride, indium nitride (InN), and their alloys have long been considered as promising materials for device applications. Recently, growth of high quality InN as well as InxGa1−xN have been demonstrated. In particular, progress in the manufacturing of very high quality, single-crystal InN thin films has opened up a new challenging research avenue in the Ill-nitride semiconductors. In contrast to earlier beliefs, it has recently been found that InN has a relatively narrow bandgap, only ∼0.8 eV. Consequently, it is expected that InN has the smallest effective mass of the III-N semiconductors. As a result, very high electron mobility and a very large saturation velocity are expected. Recent single-particle Raman scattering, supported by ensemble Monte Carlo simulations suggest that steady velocities of the order of 5 × 107 cm/s can be found in high quality, single crystal wurtzite films of InN [1]. Here, we report on these calculations for the transport and properties of the non-equilibrium longitudinal optical phonons. We use a high quality, single-crystal wurtzite InN film grown on GaN and study the transport with picosecond/subpicosecond Raman spectroscopy. The built-in polarization and piezoelectric stress lead to an electric field of ∼80 kV/cm in the sample, which is oriented in the growth direction. From the Raman data [1], we can determine not only the average velocities (the drift velocity), but also the distribution function of the carriers along the field direction.

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

High-Electron-Mobility Inn Epilayers Grown On Silicon Substrate

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Non-Equilibrium Carrier Transport in A High-Quality Inn Film Grown on Gan

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Effects of Dislocations on Electron Transport in Wurtzite InN

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

Nonpolar-Oriented Wurtzite InP Nanowires with Electron Mobility Approaching the Theoretical Limit

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy