Abstract:InN materials have been attracting a lot of attention for its prominent application in electronic and optical devices,compared with GaN and AlN,InN has smaller effective mass and higher electron drift velocity.However,the growth difficulties due to low growth temperature and lack of lattice-matched substrate restricted the evolution of InN-based devices,more and more efforts are made in efficiently deposit InN films with better quality.InN films were synthesized on the(0001) sapphire substrates at different growth temperatures by metal organic chemical vapor deposition(MOCVD),the growth source materials are trimethylindium(TMI),trimethylgallium(TMG) and ammonia(NH3).The physical properties of the films were characterized by a series of measurements.We fully studied the characteristic of InN films by various methods,such as X-ray diffraction(XRD),atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS) and Raman measurements.It's well known that the growth temperature is one of the most important parameters in growth of InN films,so in our study,we focus our attention mainly on the effect of growth temperature.It was found that 600 ℃ is a suitable growth temperature for InN films,the suitable temperature can inhibit the surface segregation phenomenon of In on the surface of InN films.But at a lower or higher temperature it will lead to a surface segregation of In on the InN films.The crystalline quality and morphology of the surface for the sample without surface segregation have been improved compared with the samples with surface segregation.In addition,it was also found that the residual strain in InN films increased with increasing growth temperature by Raman analysis,the E2(high) model frequency shift toward high frequency with increasing growth temperature,and this shift is due to the presence of residual thermal strain in the InN film.When the growth temperature is lower,the residual thermal strain came into being due to the different thermal expand coefficient between the epitaxial-film and the sapphire substrate.The residual thermal strain is biaxial strain,which can be expressed as:εxx=(Tg-Tr)(αsub-αfilm),Tg,Tr are the growth and room temperature,αsub,αfilm are the thermal expand coefficient of sapphire substrate and InN film,respectively.The relation between E2(high) model frequency and residual thermal strain can be expressed as:ω=20εxx+479(cm-1),which fit from the result of Raman analysis,where ω is the E2(high) model frequency,and εxx is the residual biaxial thermal strain.

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Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Growth of Thick InN by Molecular Beam Epitaxy

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

High-Electron-Mobility Inn Epilayers Grown On Silicon Substrate

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Study on In Segregation in InN Films Grown by Metal-organic Chemical Vapor Deposition

Effect Of An Aln Buffer Layer On The Epitaxial Growth Of Inn By Molecular-Beam Epitaxy

Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Influence of GaN Buffer Layer for InN Growth

Aln Thin Films Grown by Ion-Beam-Enhanced Deposition and Its Application to Soi Materials