Abstract:In this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm−2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm−2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm−3 were routinely achieved in this study. The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Effect Of An Aln Buffer Layer On The Epitaxial Growth Of Inn By Molecular-Beam Epitaxy

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Growth of Thick InN by Molecular Beam Epitaxy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Influence of GaN Buffer Layer for InN Growth

Mocvd Growth of Inn Using A Gan Buffer

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

Growth Of Inn For Heterojunction Field Effect Transistor Applications By Plasma Enhanced Mbe

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Electron Accumulation at Inn/Aln and Inn/Gan Interfaces

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer