Abstract:The authors present an in situ study of the effect of nitrogen plasma pulse time on the temporal evolution of the surface morphology of InN growth on a-plane sapphire at 250 °C by plasma assisted atomic layer epitaxy (ALEp). The growth surface evolution was monitored in real-time using grazing incidence small angle x-ray scattering (GISAXS) measurements at an x-ray incidence angle of 0.8°. Nitrogen plasma pulse time (tp) was varied between 15 and 30 s in 5-s steps, and for all tp, the near specular scattering broadens and correlated peaks develop and evolve along the Yoneda Wing (YW). For tp ≥ 20 s, a YW with one correlated length scale evolves. At the end of the growth, the longest correlated length scale is 16.54 nm for tp = 25 s. Porod analysis of GISAXS intensity at high qy for tp = 25 s shows the formation of mounded shapes at the early stage of nucleation that transitioned to cylinders after about 3 unit cells of InN growth. Additionally, at tp = 25 s, the growth rate is highest with root mean square surface roughness and carbon impurity levels at or below atomic force microscopy and x-ray photoelectron spectroscopy sensitivity limits, respectively. At tp < 25 s, the growth surface may be undersaturated and at tp > 30 s, it appears that trimethylindium precursor molecules start to decompose, resulting in higher carbon content in the film. Thus, the nature of GISAXS correlated length scale directly correlates with the material quality. Additional ex situ characterizations reveal an electron mobility of 6–31 cm2/V s for a 3–5 nm thick InN film on a-plane sapphire, which is similar to the reported value of 30 cm2/V s for a 1300 nm thick InN film grown by molecular beam epitaxy directly on sapphire. Thus, the combination of in situ synchrotron x-ray analysis and ex situ characterization is a powerful approach to develop understanding of the growth mechanisms of ALEp of III-N materials in order to improve the quality by reducing impurities and broaden material applications.

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Growth of A-Plane Inn Film and Its Thz Emission

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Influence of GaN Buffer Layer for InN Growth

The Growth and Properties of an M -Plane InN Epilayer on LiAlO 2 (100) by Metal-Organic Chemical Vapor Deposition

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Epitaxial growth of high quality nonpolar InN films on LiGaO 2 substrates

Epitaxial Growth and Interfaces of High-Quality InN Films Grown on Nitrided Sapphire Substrates

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

Growth of Thick InN by Molecular Beam Epitaxy

Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Growth and Characterization of Inn Thin Films on Sapphire by Mocvd

Polarized Photoluminescence and Absorption in A-Plane Inn Films

A Comparative Study on the Properties of C-Plane and A-Plane GaN Epitaxial Films Grown on Sapphire Substrates by Pulsed Laser Deposition

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering