Abstract:In this paper a systematic investigation of structural and optical anisotropy of m-plane InN film grown on γ-LiAlO2(1 0 0) substrate by metal organic chemical vapour deposition, which is believed to be much more difficult than molecular beam epitaxy, is presented. The InN film showed pure m-plane phase as confirmed by x-ray diffraction ω/2θ scan together with polarized Raman spectroscopy. The epitaxial relationship between the m-plane InN and the substrate was found to be [0 0 0 1]InN ∥ [0 1 0]LAO and [1 1 − 2 0]InN ∥ [0 0 1]LAO. The inherent film mosaic anisotropy was studied by x-ray rocking curve analysis. Atomic force microscopy revealed that stripe-like features appear on the surface of the m-plane InN film, which originated from the replication of the surface morphological anisotropy of the substrate. Scanning electron microscopy showed blocky surface structures that were indicative of three-dimensional growth mode, which was related to the anisotropic structural mismatch of the film and the foreign substrate. A small direct band gap of ∼0.7 eV of the m-plane InN film was confirmed by low-temperature photoluminescence spectra, which showed evident polarization anisotropy in terms of both intensity and peak energy. Finally, a blue-shift of absorption edge as compared with the photoluminescence peak energy was observed and fully accounted for by the Burstein–Moss effect.

Growth of A-Plane Inn Film and Its Thz Emission

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Influence of GaN Buffer Layer for InN Growth

Growth-dependent Phonon Characteristics in InN Thin Films

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Growth of Thick InN by Molecular Beam Epitaxy

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range

Epitaxial Growth and Interfaces of High-Quality InN Films Grown on Nitrided Sapphire Substrates

Epitaxial growth of high quality nonpolar InN films on LiGaO 2 substrates

Growth and Characterization of Inn Thin Films on Sapphire by Mocvd

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

The Growth and Properties of an M -Plane InN Epilayer on LiAlO 2 (100) by Metal-Organic Chemical Vapor Deposition

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Growth of P-Type A-Plane Zno Thin Films on R-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy