Abstract:In this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm−2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm−2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm−3 were routinely achieved in this study. The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source

Growth of Thick InN by Molecular Beam Epitaxy

Origin of the N-Type Conductivity of InN: the Role of Positively Charged Dislocations

Unintentionally Doped InN Grown Onto an Atomically Flat AlN Intermediate Layer Using Plasma‐assisted Molecular Beam Epitaxy

Effect of Epitaxial Temperature on N-polar InN Films Grown by Molecular Beam Epitaxy

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy

High-Electron-Mobility Inn Epilayers Grown On Silicon Substrate

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Electron Concentration Dependence of Exciton Localization and Freeze-out at Local Potential Fluctuations in InN Films

Growth Of Inn For Heterojunction Field Effect Transistor Applications By Plasma Enhanced Mbe