Abstract:Gallium nitride (GaN), aluminum nitride, indium nitride (InN), and their alloys have long been considered as promising materials for device applications. Recently, growth of high quality InN as well as InxGa1−xN have been demonstrated. In particular, progress in the manufacturing of very high quality, single-crystal InN thin films has opened up a new challenging research avenue in the Ill-nitride semiconductors. In contrast to earlier beliefs, it has recently been found that InN has a relatively narrow bandgap, only ∼0.8 eV. Consequently, it is expected that InN has the smallest effective mass of the III-N semiconductors. As a result, very high electron mobility and a very large saturation velocity are expected. Recent single-particle Raman scattering, supported by ensemble Monte Carlo simulations suggest that steady velocities of the order of 5 × 107 cm/s can be found in high quality, single crystal wurtzite films of InN [1]. Here, we report on these calculations for the transport and properties of the non-equilibrium longitudinal optical phonons. We use a high quality, single-crystal wurtzite InN film grown on GaN and study the transport with picosecond/subpicosecond Raman spectroscopy. The built-in polarization and piezoelectric stress lead to an electric field of ∼80 kV/cm in the sample, which is oriented in the growth direction. From the Raman data [1], we can determine not only the average velocities (the drift velocity), but also the distribution function of the carriers along the field direction.

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Non-Equilibrium Carrier Transport in A High-Quality Inn Film Grown on Gan

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Ultrafast Raman Scattering Studies of Electron Transport in A Thick Inn Film Grown on Gan

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Observation of Large Electron Drift Velocities in Inn by Ultrafast Raman Spectroscopy

Effects of Dislocations on Electron Transport in Wurtzite InN

Transport and mobility properties of wurtzite InN and GaN

Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Electron transport in GaN(ZB) and AlN(WZ)

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Raman Investigations of Disorder in Inn Thin Films Grown by Reactive Sputtering on Gaas

Boundary-Enhanced Momentum Relaxation of Longitudinal Optical Phonons in Gan

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Subpicosecond Time-Resolved Raman Studies of Electron–longitudinal Optical Phonon Interactions in InN

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy