Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy
K. T. Tsen,D. K. Ferry,H. Lu,W. J. Schaff
DOI: https://doi.org/10.1007/978-3-540-36588-4_31
2006-01-01
Abstract:Gallium nitride (GaN), aluminum nitride, indium nitride (InN), and their alloys have long been considered as promising materials
for device applications. Recently, growth of high quality InN as well as InxGa1−xN have been demonstrated. In particular, progress in the manufacturing of very high quality, single-crystal InN thin films
has opened up a new challenging research avenue in the Ill-nitride semiconductors. In contrast to earlier beliefs, it has
recently been found that InN has a relatively narrow bandgap, only ∼0.8 eV. Consequently, it is expected that InN has the
smallest effective mass of the III-N semiconductors. As a result, very high electron mobility and a very large saturation
velocity are expected. Recent single-particle Raman scattering, supported by ensemble Monte Carlo simulations suggest that
steady velocities of the order of 5 × 107 cm/s can be found in high quality, single crystal wurtzite films of InN [1]. Here, we report on these calculations for the transport and properties of the non-equilibrium longitudinal optical phonons.
We use a high quality, single-crystal wurtzite InN film grown on GaN and study the transport with picosecond/subpicosecond
Raman spectroscopy. The built-in polarization and piezoelectric stress lead to an electric field of ∼80 kV/cm in the sample,
which is oriented in the growth direction. From the Raman data [1], we can determine not only the average velocities (the drift velocity), but also the distribution function of the carriers
along the field direction.