Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron-Density Dependence of Longitudinal-Optical Phonon Lifetime in Inn Studied by Subpicosecond Time-Resolved Raman Spectroscopy

Direct Measurements Of The Lifetimes Of Longitudinal Optical Phonon Modes And Their Dynamics In Inn

Subpicosecond Time-Resolved Raman Studies of Electron–longitudinal Optical Phonon Interactions in InN

Phonon Lifetimes and Phonon Decay in InN

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Phonon Polariton of InN Observed by Infrared Synchrotron Radiation

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Time-resolved Spectroscopy of Recombination and Relaxation Dynamics in InN

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Resonant Raman Scattering and Dispersion of Polar Optical and Acoustic Phonons in Hexagonal Inn

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Ultrafast dynamics of electronic structure in InN thin film

Broadening Factors Ofe1(lo)phonon-Plasmon Coupled Modes of Hexagonal InN Investigated by Infrared Reflectance Measurements

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Electron-Phonon Interaction in Disordered Semiconductors

Photoluminescence of N‐inn with Low Electron Concentrations

Study of Electron-phonon coupling dynamics in Au nanorods by transient depolarization measurements

Observation of Phonon Sideband Emission in Intrinsic InN Nanowires: a Photoluminescence and Micro-Raman Scattering Study.

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Observation of Large Electron Drift Velocities in Inn by Ultrafast Raman Spectroscopy

Temperature Dependence of the A1(LO) and E2 (high) Phonons in Hexagonal InN Nanowires