Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Phonon Polariton of InN Observed by Infrared Synchrotron Radiation

Phonon Lifetimes and Phonon Decay in InN

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Electron-Density Dependence of Longitudinal-Optical Phonon Lifetime in Inn Studied by Subpicosecond Time-Resolved Raman Spectroscopy

Direct Measurements Of The Lifetimes Of Longitudinal Optical Phonon Modes And Their Dynamics In Inn

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Time-resolved Spectroscopy of Recombination and Relaxation Dynamics in InN

Temperature-Dependent Optical Properties of Wurtzite Inn

Acceptor States in the Photoluminescence Spectra of N-Inn

Subpicosecond Time-Resolved Raman Studies of Electron–longitudinal Optical Phonon Interactions in InN

Broadening Factors Ofe1(lo)phonon-Plasmon Coupled Modes of Hexagonal InN Investigated by Infrared Reflectance Measurements

Observation of Phonon Sideband Emission in Intrinsic InN Nanowires: a Photoluminescence and Micro-Raman Scattering Study.

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Photoluminescence of N‐inn with Low Electron Concentrations

Optical Properties of InN Films Grown by MOCVD

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Surface optical Raman modes in InN nanostructures

Ultrafast dynamics of electronic structure in InN thin film

Unusual Properties of the Fundamental Band Gap of InN

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

Carrier Recombination Processes in In-polar N-Inn in Regions of Low Residual Electron Density