Abstract:Gallium nitride (GaN), aluminum nitride, indium nitride (InN), and their alloys have long been considered as promising materials for device applications. Recently, growth of high quality InN as well as InxGa1−xN have been demonstrated. In particular, progress in the manufacturing of very high quality, single-crystal InN thin films has opened up a new challenging research avenue in the Ill-nitride semiconductors. In contrast to earlier beliefs, it has recently been found that InN has a relatively narrow bandgap, only ∼0.8 eV. Consequently, it is expected that InN has the smallest effective mass of the III-N semiconductors. As a result, very high electron mobility and a very large saturation velocity are expected. Recent single-particle Raman scattering, supported by ensemble Monte Carlo simulations suggest that steady velocities of the order of 5 × 107 cm/s can be found in high quality, single crystal wurtzite films of InN [1]. Here, we report on these calculations for the transport and properties of the non-equilibrium longitudinal optical phonons. We use a high quality, single-crystal wurtzite InN film grown on GaN and study the transport with picosecond/subpicosecond Raman spectroscopy. The built-in polarization and piezoelectric stress lead to an electric field of ∼80 kV/cm in the sample, which is oriented in the growth direction. From the Raman data [1], we can determine not only the average velocities (the drift velocity), but also the distribution function of the carriers along the field direction.

Observation of Phonon Sideband Emission in Intrinsic InN Nanowires: a Photoluminescence and Micro-Raman Scattering Study.

Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Subpicosecond Time-Resolved Raman Studies of Electron–longitudinal Optical Phonon Interactions in InN

Surface optical Raman modes in InN nanostructures

Temperature Dependence of the A1(LO) and E2 (high) Phonons in Hexagonal InN Nanowires

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Experimental Studies Of Lattice Dynamical Properties In Indium Nitride

In-Situ Optical Transmission Electron Microscope Study of Exciton Phonon Replicas in Zno Nanowires by Cathodoluminescence

Direct Measurements Of The Lifetimes Of Longitudinal Optical Phonon Modes And Their Dynamics In Inn

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Observation of Visible Luminescence from Indium Nitride at Room Temperature

Multiphonon Resonant Raman Scattering in N‐doped ZnO

Phonon Polariton of InN Observed by Infrared Synchrotron Radiation

Synthesis, Microstructure, Growth Mechanism and Photoluminescence of High Quality [0001]-Oriented Inn Nanowires and Nanonecklaces

Observation of photogalvanic current for interband absorption in InN films at room temperature

Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires

Phonon Lifetimes and Phonon Decay in InN

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns