Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

Surface optical Raman modes in InN nanostructures

Growth-dependent Phonon Characteristics in InN Thin Films

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Observation of Phonon Sideband Emission in Intrinsic InN Nanowires: a Photoluminescence and Micro-Raman Scattering Study.

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Surface-plasmon resonances in indium nitride with metal-enriched nano-particles

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Photoluminescence of N‐inn with Low Electron Concentrations

Growth of InN quantum dots to nanorods: A competition between nucleation and growth rates

Subpicosecond Time-Resolved Raman Studies of Electron–longitudinal Optical Phonon Interactions in InN

Experimental Studies Of Lattice Dynamical Properties In Indium Nitride

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

Phonon Polariton of InN Observed by Infrared Synchrotron Radiation

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

Acceptor States in the Photoluminescence Spectra of N-Inn

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Effects of Growth Temperature on the Optical Properties of InN Nanostructures Grown by MOCVD

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate