Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature-Dependent Optical Properties of Wurtzite Inn

Unusual Properties of the Fundamental Band Gap of InN

Photoluminescence of N‐inn with Low Electron Concentrations

Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Growth and Depth Dependence of Visible Luminescence in Wurtzite Inn Epilayers

Ultrafast carrier dynamics in InN epilayers

Time-resolved Spectroscopy of Recombination and Relaxation Dynamics in InN

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Phonon Polariton of InN Observed by Infrared Synchrotron Radiation

Temperature‐dependent Growth and Characterization of N‐polar InN Films by Molecular Beam Epitaxy

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Influence of Strain on the Band Gap Energy of Wurtzite InN

Temperature Dependence Of The Fundamental Band Gap Of Inn

Critical point transitions of wurtzite indium nitride

Optical Bleaching Effect in Inn Epitaxial Layers

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Effects Of The Narrow Band Gap On The Properties Of Inn

Temperature Dependence of the A1(LO) and E2 (high) Phonons in Hexagonal InN Nanowires

Optical Properties of InN Films Grown by MOCVD