Abstract:Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap) has been recently measured, E0 = 0.46 eV at low temperature. The electronic gap at the A point of the Brillouin zone (equivalent to the L point in the zinc-blende structure, E1) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band structure of InAs in the zinc-blende and wurtzite phases, using the full potential linearized augmented plane wave method, including spin-orbit interaction. The electronic band gap has been improved through the modified Becke-Johnson exchange-correlation potential. Both the E0 and E1 gaps agree very well with the experiment. From the calculations, a crystal field splitting of 0.122 eV and a spin-orbit splitting of 0.312 eV (the experimental value in zinc-blende InAs is 0.4 eV) has been obtained. Finally, we calculate the dielectric function of InAs in both the zinc-blende and wurtzite phases and a comparative discussion is given.

Influence of Strain on the Band Gap Energy of Wurtzite InN

Effects Of The Narrow Band Gap On The Properties Of Inn

Influence of Biaxial Strain on Near-Band-Edge Optical Properties of C- and A-Plane Wurtzite-Inn Films

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Unusual Properties of the Fundamental Band Gap of InN

Phase transition and band-structure tuning in InN through uniaxial and biaxial strains

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Temperature-Dependent Optical Properties of Wurtzite Inn

Effects of Electron Concentration on the Optical Absorption Edge of InN

Valence Band Density of States of Zinc-Blende and Wurtzite InN from X-Ray Photoemission Spectroscopy and First-Principles Calculations

Optical Properties of InN Films Grown by MOCVD

Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy

Temperature Dependence Of The Fundamental Band Gap Of Inn

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Optical Properties and Electronic Structure of Inn and In-Rich Group Iii-Nitride Alloys

Critical point transitions of wurtzite indium nitride

Experimental Determination of Strain-Free Raman Frequencies and Deformation Potentials for the E-2 High and A(1)(Lo) Modes in Hexagonal Inn

The Bandgap Distribution Investigated Across the Strain-Induced Bending ZnO Nanowire

Effects of Dislocations on Electron Transport in Wurtzite InN

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties